采用溶胶-凝胶和射频磁控溅射相结合的方法制备了PZT铁电薄膜. 用溶胶-凝胶法制备一层PZT薄膜作为籽晶层, 在衬底PZT(seed layer)/Pt/Ti/SiO2/Si上用射频磁控溅射过量10%Pb的Pb(ZrxTi1-x)O3(x=0.3)陶瓷靶生长厚500nm的PZT铁电薄膜. 采用在450℃预退火, 575℃后退火的快速分级退火方法对PZT铁电薄膜进行热处理. PZT铁电薄膜获得了较好的热释电性能, 热释电系数、介电常数、介电损耗和探测度优值因子分别为ρ=2.3×10-8C．cm-2·K-1, ε =500, tanδ =0.02, F d=0.94×10-5Pa-0.5.
Lead zirconate titanate(PZT) ferroelectric thin films were prepared by both sol-gel and r.f. magnetron sputtering technologies. In order to decrease the crystallization temperature of thin films and improve the probabilities of nucleus, a PZT seed-layer was prepared by using the sol-gel method. The PZT ferroelectric thin films with about 500nm thickness were sputter-deposited from a Pb(ZrxTi1-x)O3(x=0.3) ceramic target containing 10% excess Pb on PZT(seed layer)/Pt/Ti/SiO2/Si substrates. The stepping-annealing with RTP (rapid theal process) was proposed for theal treatment of the PZT ferroelectric thin films. The PZT ferroelectric thin film showed good dielectric and pyroelectric properties
by pre-annealing at 450℃ for 5min and following post-annealing at 575℃ for 5min. The results of pyroelectric coefficient 2.3×10-8C·cm-2·K-1, relative dielectric constant 500, dielectric loss 0.02, detectivity figure of merit 0.94×10-5Pa-0.5 were obtained.
参考文献
| [1] | |
| [2] | |
| [3] | Achard H, Macacute o H, Peccoud L. Microelectronic Engineering, 1995, (29): 19--28. [2] Boerasua M Pereiraa, Gomesa M J M, et al. Journal of the European Ceramic Society, 2004, (24): 1633--1636. [3] Ma J H, Meng X J, Sun J L, et al. Applied Surface Science, 2005, (240): 275--279. [4] Liu Weiguo, Jongsoo Ko, Zhu Weiguang. Infrared Physics & |
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