利用溶胶-凝胶法低温合成了钒掺杂硅酸盐氧基磷灰石La9(SiO4)6-x(VO4)xO1.5+0.5x (x=0、0.5 和1), 经XRD表征所得产品为磷灰石相. 以电化学阻抗谱研究了其导电性能, V的掺杂使电导率大大提高, 700℃C时La9(SiO4)5(VO4)O2电导率为5.23×10-3S·cm-1, 与未掺杂V的La9(SiO4)6O1.5相比提高了5倍. 氧分压PO2=105~1Pa时, La9(SiO4)6O1.5的电导率不改变, 而La9(SiO4)_5(VO4)O2的电导率则随着氧分压的降低而稍有增加, 表明钒的掺杂在体系中引入n型电子导电.
The V-doped silicate oxyapatites La9(SiO4)6-x(VO4)xO1.5+0.5x (x=0, 0.5 and 1) were synthesized successfully via a sol-gel method at 800circC. The apatite phases were characterized by X-ray diffraction (XRD). Conducting properties were studied by electrochemical impedance spectroscopy (EIS). It is found that the conductivities are influenced by increasing vanadium content, the conductivity of La9(SiO4)5(VO4)O2 is 5.23×times 10-3S·cm-1 at 700circC, it is about 5 times higher than La9(SiO4)6O1.5.
The electrical conductivity of La9(SiO4)6O1.5 is almost independent
of the oxygen partial pressure from 105 to 1Pa, but that of La9(SiO4)_5(VO4)O2
is minor increased. This result may indicate n-type electron conduction
generated in the vanadium doped system.
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