Li-N-H共掺法制备 p型 ZnO薄膜

无机材料学报, 2006, 21(6): 1511-1514. doi: 10.3724/SP.J.1077.2006.01511

Li-N-H共掺法制备 p型 ZnO薄膜

卢洋藩 , 叶志镇 , 曾昱嘉 , 陈兰兰 , 朱丽萍 , 赵炳辉

(浙江大学硅材料国家重点实验室, 杭州 310027)

(State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China)

关键词： p-ZnO , magnetron sputtering , codoping

Preparation of Li-N-H Codoped p-type ZnO Films

LU Yang-Fan , YE Zhi-Zhen , ZENG Yu-Jia , CHEN Lan-Lan , ZHU Li-Ping , ZHAO Bing-Hui

Keywords： p-type ZnO , 磁控溅射 , 共掺

采用Li-N-H共掺技术在玻璃衬底上生长p型ZnO薄膜. XRD结果表明共掺ZnO薄膜具有高度cll轴取向, Hall测试表明薄膜的电阻率为25.2Ω·cm, Hall迁移率为0.5cm²/(V·s), 空穴浓度为4.92×10¹⁷/cm³. 此外, p-ZnO薄膜在可见光区域具有90%的高透射率.

Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω·cm, Hall mobility of 0.5cm²/(V·s), carrier density of 4.92×10¹⁷cm^-3, and transmittance of about 90%.

参考文献

[1]

Tang Z K, Wong G K L, Yu P, et al. Appl. Phys. Lett., 1998, 72: 3270--3272.
[2] Oba Fumiyasu, Nishitani Shigeto R. J. Appl. Phys., 2001, 90 (2): 824--828.
[3] Van de Walle C G. Phys. B, 2001, 308-310: 899--903.
[4] Park C H, Zhang S B, Wei Su-huai. Phys. Rev. B, 2002, 66: 073202--1--3.
[5] Wardle M G, Goss J P, Briddon P R. Phys. Rev. B, 2005, 71: 155205--1--10.
[6] Lee E C, Chang K J. Phys. Rev. B, 2004, 70: 115210--1--4.
[7] Ip K, Overberg M E, Heo Y W, et al. Appl. Phys. Lett., 2003, 82 (3): 385--387.
[8] Look D C, Reynolds D C, Litton C W, et al. Appl. Phys. Lett., 2002, 81: 1830--1832.
[9] 周婷, 叶志镇, 赵炳辉,等(ZHOU Ting, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (4): 955--958.
[10] Xu Wei-Zhong, Ye Zhi-Zhen, Zhou Ting, et al. J. Crystal Growth, 2004, 265: 133--136.
[11] Lu J G, Ye Z Z, Zhuge F, et al. Appl. Phys. Lett., 2004, 85: 3134--3135.
[12] 叶志镇, 张银珠, 徐伟中(YE Zhi-Zhen, et al). 无机材料学报(Journal of Inorganic Materials), 2003, 18 (1): 11--18.
[13] Chen Y, Tuan N T, Segawa Y, et al. Appl. Phys. Lett., 2001, 78: 1469--1471.
[14] Zhang B P, Binh N T, Segawa Y, et al. Appl. Phys. Lett., 2004, 84: 586--588.
[15] Jin B J, Im S, Lee S Y. Thin Solid Films, 2000, 366: 107--110.
[16] Kang H S, Kang J S, Pang S S, et al. Mater. Sci. Eng. B, 2003, 102: 313--316.
[17] Kumar P M R, Kartha C S, Vijayakumar K P, et al. Mater. Sci. Eng. B, 2005, 117: 307--312.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网