采用不同厚度的Fe膜在673K热硫化20h 制备出具有不同晶粒尺寸的FeS2薄膜, 分析并测定了薄膜组织结构、微应变及光吸收性能. 结果表明, Fe膜硫化形成的FeS2薄膜厚度在120～550nm范围内变化时, 可导致平均晶粒尺寸在40～80nm之间变化. FeS2晶粒尺寸的变化造成了晶体面缺陷密度的变化, 可引起微观内应力水平、缺陷能级分布和晶界势垒高度的变化, 进而使得薄膜的微应变、点阵畸变度、光吸收系数及禁带宽度等物理特性随晶粒尺寸的增加而降低.
FeS2 thin films with different grain sizes were synthesized by the sulfuration reaction of Fe films with different thickness at 673K for 20h. The microstructure, microstress and optical absorption of the films were investigated. The average grain size of the FeS2 films changes from 40nm to 80nm when the film thickness changes from 120nm to 550nm. The internal microstrain, lattice distortion, absorption coefficient and energy gap decrease with the grain size increasing. The mechanism responsible for the result can be attributed to the variation of
the degree of microstress, the distribution of energy level of crystal defect
states and the height of grain boundary barrier due to the change of the
crystal planar defects density with the grain size changing.
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