以硅粉和碳黑为初始原料, 通过机械活化和化学活化预处理, 实现了Si-C体系在较低温度下燃烧合成SiC. 采用XRD、SEM和EDS等手段, 分析了合成产物的相组成和微观结构特征. 结果表明: 机械活化预处理可使燃烧反应诱发温度降低至1050℃, 合成SiC粉体的比表面积为4.36 m2/g, 平均粒径<5μm.
Mechanical-activation-assisted combustion synthesis of SiC was conducted with PVC and/or NH4Cl as promoters. The mechanical activation of the Si-C reactants through high-energy attrition milling results in substantial decrease of the ignition temperature and the incubation time for the Si-C combustion reaction. Ultra-fine β-SiC powders with equiaxed grains can be synthesized at the preheating temperature as low as 1050C. The specific surface area (SSA) of the combustion synthesized SiC powders is 4.36m2/g, and the average particle size is less than 5μm.
参考文献
| [1] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%