采用直流电弧法使金属钽和氮气直接反应制备出了TaN纳米粉．利用XRD、XPS、TEM等测试方法对所制备的TaN纳米粉进行了表征．结果表明: 所制备的纳米粉为单一的立方相TaN, 纳米颗粒的平均粒度为5~10nm．实验中还发现氮气的气压对制备纯立方相TaN具有关键性作用, 并讨论了立方相TaN的形成机理．
Cubic tantalum nitride (TaN) nanocrystallites were synthesized by the direct-current (dc) arc discharge method in N2 gas. The influence of N2 pressure on the as-synthesized cubic TaN samples was studied. The growth mechanism of cubic TaN was discussed. XRD, TEM and XPS were used to characterize the product. The results show that the influence of N2 pressure plays a key role in the preparation of pure cubic TaN nanocrystallites. The size of cubic TaN nanocrystallites obtained is 5--10nm.
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