用溶胶-凝胶法在Pt/Ti/SiO 2/Si衬底上制备了系列Mn-Mg共掺杂的钛酸锶钡(Ba 0.25 Sr 0.75 TiO 3)薄膜. X射线衍射以及场发射扫描电镜分析表明: 薄膜为钙钛矿结构且无杂相生成, 薄膜表面晶粒均匀、无裂纹. 测试了不同浓度掺杂薄膜的介电性能, 掺杂浓度为1mol% 时, 薄膜的介电常数、损耗、可调性和漏电流密度分别为200、0.010、38%、1×10-5 A/cm 2. 性能改善后的薄膜材料可以用来制作微波可调器件.
Undoped and Mn-Mg co-doped barium strontiun titanate (Ba0.25Sr0.75TiO3) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel technique. X-ray diffraction (XRD) analysis and FE- SEM reveal that the films exhibite a pure perovskite phasestructure, uniform grain sizes and crack-fee. The dielectric constant, loss, tunability and leakage current density are 200, 0.010, 38%, 1×10 -5 A/cm 2, respectively, at a 1mol% Mn-Mg content. The improved BST thin films can be used for tunable microwave devices.
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