采用飞秒脉冲激光沉积法在Si(100)和Si(111)单晶基片上制备了均匀的单相β-FeSi2薄膜; 用X射线衍射(XRD), 场扫描电镜(FESEM), 能谱仪(EDX), 傅立叶红外拉曼谱仪(FTRIS)研究了薄膜的结构、组分、表面形貌和光学性能. 观察到了β-FeSi2在Si单晶基片上的生长与晶面取向有关的证据, 并在室温(2℃)下观测到β-FeSi2薄膜的光致发光, 其发光波长为1.53μm; 在氩离子514nm激光的激发下, 在192.0和243.9cm-1等位置观察到β-FeSi2的拉曼散射峰.
The even single phase β-FeSi2 thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties of β-FeSi2 films. The growth of β-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi2 thin film observed at room temperature (2℃) is at a wavelength of 1.53 μm. Raman peaks of β-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm-1, 243.9cm-1 and other positions.
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