以CoCl2, SbCl3和Te粉为原料, NaBH4为还原剂, 用溶剂热方法合成了Te掺杂方钴矿CoSb3-xTex(x=0, 0.05, 0.1, 0.2, 0.4)纳米粉末. 研究发现, Te含量较高的样品(x≥0.2)有明显的CoTe2等杂相存在. CoSb3-xTex合成粉末的粒径大小在40nm左右, 热压后晶粒发生长大, 平均晶粒尺寸约为300nm. 电学性能测试表明Te掺杂方钴矿CoSb3-xTex的导电类型为n型, Seebeck系数的绝对值随着Te含量的增加而变小, 电导率随着Te含量的增加而增大. 在测试温度范围内, CoSb2.8Te0.2 具有最高的功率因子, 在773K温度下达到2.3×103W·m-1·K-2.
Nanosized Te-doped skutterudites CoSb3-xTex (x=0, 0.05, 0.1, 0.2, 0.4) were prepared by a solvothermal method using CoCl2, SbCl3 and pure telluride powder as precursors and NaBH4 as reductant. It is found that trace of other impurity phases such as CoTe2 are coexisted for x≥0.2. The size of synthesized CoSb3-xTex powders is about 40nm, and the grains are grown up to an average size of about 300nm after hot-pressing. Transport properties measurements indicate that the Te-doped CoSb3-xTex have n-type conduction. As the Te fraction increases, the values of electrical conductivity increase, while the absolute Seebeck coefficient values decrease. A maximum power factor of 2.3×10-3W·m-1·K-2 is obtained at 773K for CoSb2.8Te0.2.
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