采用分子束外延的方法在BaF2衬底(111)上制备出了高质量的Pb1-xSrxSe (0≤ x≤0.050)薄膜. X射线衍射结果表明, Pb1-xSrxSe 薄膜为立方相NaCl型晶体结构, 没有观察到SrSe相分离现象, 薄膜的取向为平行于衬底(111)晶面. 薄膜晶格常数随Sr含量的增加逐渐增大, Sr含量由Vegard公式得到. 再用理论模拟Pb1-xSrxSe 薄膜透射光谱的方法得到了相应的带隙. 最后通过介电函数模型拟合得到了PbSe和Pb1-xSrxSe 薄膜在光子能量位于基本带隙附近的折射率n和吸收系数α.
High quality Pb1-xSrxSe (0≤ x≤0.050) thin films were grown on BaF2(111) substrates by using molecular beam epitaxy(MBE). Optical and structural properties of the Pb1-xSrxSe films were studied using transmission spectrum and high resolution X-ray diffraction (HRXRD). HRXRD patterns indicate that Pb1-xSrxSe films has cubic-phase structure, with no SrSe phase separation.
The films orientation is parallel to (111) surface of substrate. The lattice constants of the Pb1-xSrxSe films increase with increasing Sr content. The Sr content can be obtained by using Vegard formula. Sharp absorption edges are observed in the transmission spectrum of Pb1-xSrxSe films. The fundamental band gap of the Pb1-xSrxSe films is attained by simulation. Refractive indexes and absorption coefficients near the fundamental band-gap are obtained by simulation using dielectric function model(DFM).
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