通过直流反应磁控溅射法在玻璃衬底上制备了掺镓ZnO(ZnO:Ga)透明导电薄膜, 研究了氧分压对ZnO:Ga透明导电薄膜结构和电光学性能的影响. X射线衍射结果表明所制备的薄膜具有c轴择优取向的六角多晶结构. ZnO:Ga透明导电薄膜的晶粒尺寸强烈依赖于氧分压的大小, 随着氧分压的增大薄膜的晶粒尺寸先增大后减小, 在氧分压为0.30 Pa时沉积的ZnO:Ga薄膜半高宽最小, 晶粒尺寸最大. 薄膜的电阻率随着氧分压的增大先减小后增大, 沉积薄膜的最低电阻率可达3.50×10-4Ω·cm. 此外, 所有ZnO:Ga薄膜在可见光范围内的平均透射率均超过90%.
Ga-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The influence of oxygen partial pressure on the structural, electrical and optical properties of ZnO:Ga films was investigated. The X-ray diffraction (XRD) studies show that the films are highly oriented with their crystallographic c-axis perpendicular to the substrate. The grain size of ZnO:Ga films is strongly dependent on the oxygen partial pressure. With the oxygen partial pressure increasing, the grain size of the films increases first, reaches a maximum at 0.30Pa and then decreases. As the oxygen partial pressure increases, the resistivity of ZnO:Ga films decreases gradually, reaches a minimum at 0.30Pa and then increases. The lowest resistivity of ZnO:Ga films obtained at the oxygen partial pressure of 0.30Pa is 3.50×10-4Ω·cm. The average transmittance of the ZnO:Ga thin films is over 90%.
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