采用脉冲激光沉积(PLD)技术, 在MgO(100)基片上制备了b轴取向的BaTi2O5薄膜, 研究了基片温度(Tsub)、氧分压(PO2)等沉积工艺对薄膜结构的影响. 结果表明: BaTi2O5薄膜的物相及取向性都随基片温度和氧分压的改变而变化, 薄膜呈现(710)或(020)取向生长, 最佳的PLD沉积条件为T sub=700℃和P O2=12.5Pa. 在该条件下, BaTi2O5薄膜表现出明显的b轴取向, 薄膜表面平整光滑, 结晶良好, 晶粒呈棒状交叉分布, 结合紧密.
A new kind of b-axis oriented BaTi2O5 thin film was prepared on MgO (100) substrates by pulsed laser deposition. The effects of substrate temperature (T sub) and oxygen partial pressure (P O2) on the crystal phase and preferred orientation were investigated. The BaTi2O5 thin films exhibits (710) or (020) orientation, which depends on the substrate temperature and oxygen partial pressure. On the deposition condition of T sub=700℃ and P O2=12.5Pa, the b-axis oriented BaTi2O5 film is successfully obtained. The film has a dense and smooth surface, showing an elongated granular texture.
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