以固态掺杂方式利用过滤阴极真空电弧技术制备掺硼非晶金刚石薄膜, 获得性能优良的宽带隙p型半导体材料, 再利用等离子增强化学气相沉积技术制备p-i-n结构非晶硅太阳电池的本征层和n型层, 最终制成以掺硼非晶金刚石薄膜为窗口层的非晶硅太阳电池. 利用Lambda950紫外-可见光分光光度计表征薄膜的光学带隙, 并测试电池开路电压、短路电流、填充因子以及转化效率等参数, 再分析电池的光谱响应特性. 实验表明, 掺硼非晶金刚石薄膜的光学带隙(～2.0eV)比p型非晶硅更宽, 以掺硼非晶金刚石薄膜用作非晶硅太阳电池的窗口层, 能够改善电池的光谱响应特征, 并提高转化效率达10%以上.
Boron doped amorphous diamond (a-D:B) films, which possess a wide optical gap and good p-type semi-conductive electroconductibility, were prepared using filtered cathodic vacuum arc system, whose target source was highly pure graphite incorporated with boron element. The intrinsic layer and the n-type layer of amorphous silicon solar cells in a configuration of p-i-n were deposited using PECVD technology. The optical gap of the boron doped amorphous diamond films was characterized with a Lambda 950 UV-Vis photometer. The parameters of solar cells, such as open-circuit voltage, short-circuit current, fill factor and efficiency, were also measured. It shows that using the a-D:B films as the window layer of p-i-n structural amorphous silicon solar cell can increase the cell conversion efficiency by a roughly 10% relative improvement compared to the conventional amorphous silicon solar cell because of the enhancement of short wavelength response.
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