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以乙醇锂和乙醇钽为起始反应物, 用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了新型钽酸锂LiTa3O8铁电薄膜. 经XRD图谱对比, 该薄膜结构不同于LiTaO3晶体结构, 与正交相结构类似. SEM分析显示经过750℃结晶退火的LiTa3O8薄膜表面均匀平整无裂纹, 膜厚约为1μm. 实验结果表明, 在450kV/cm时, LiTa3O8薄膜剩余极化强度Pr为9.3μC/cm2, 矫顽场强Ec为126.8kV/cm; 在9.5kV/cm时, LiTa3O8薄膜漏电电流为8.85×10-9A/cm2, 比LiTaO3薄膜漏电小; 在1kHz时, LiTa3O8薄膜介电常数为58.4, 介电损耗为0.26. 溶胶-凝胶法制备的 LiTa3O8薄膜结晶温度比LiTaO3薄膜高50℃以上.

A novel ferroelectric lithium tantalate LiTa3O8 thin film was prepared on Pt/Ti/SiO 2/Si substrate by sol-gel method using lithium ethoxide and tantalite ethoxide as starting materials. The structure of the LiTa3O8 film is similar to orthorhombic, which is different from LiTaO3 film based on XRD pattern. The SEM image reveals that the LiTa3O8 film crystallized at 750℃ is uniform, smooth and crack-free on the surface with thickness of 1μm. The electrical experiments show that the remanent polarization Pr and coercive field Ec of the LiTa3O8 film polarized at 450kV/cm are 9.3μC/cm2 and 126.8kV/cm, respectively; the leakage current of the LiTa3O8 film is 8.85×10-9A/cm2 at the electric field of 9.5kV/cm, lower than that of LiTaO3 film. The dielectric constant and dielectric loss of the LiTa3O8 film are 58.4 and 0.26, respectively, at frequency of 1kHz. And the crystallization temperature of sol-gel derived LiTa3O8 film is 50℃ higher than that of LiTaO3 film.

参考文献

[1] Blanton T N, Chatterjee D K. Thin Solid Films, 1995, 256 (1-2): 59--63.
[2] Shuichi A, Hiroaki N, Shinsuke H. J. Crystal Growth, 2001, 231 (1-2): 290--294.
[3] Kao M C, Chen H Z, Wang C M, et al. Physica B, 2003, 329--333P2: 1527--1528.
[4] Gonzalez A H M, SimOes A Z, Zaghete M A, et al. Materials Characterization, 2003, 50 (2-3): 233--238.
[5] 张德银, 黄大贵, 董政. 光电工程, 2006, 33 (12): 113--118.
[6] Zhang Deyin, Huang Dagui, Dong Zheng. Proc. of SPIE, 2006, 6149: 614911--614915.
[7] 张德银, 黄大贵, 李金华, 等. 红外与毫米波学报, 2007, 26 (3): 170--173.
[8] 张德银, 黄大贵, 李金华, 等. 电子科技大学学报, 2007, 36 (4): 660--662.
[9] McMurdie H, Morris M, Evans E, et al. Powder Diffraction, 1986, 1: 91.
[10] Pouchard C C. Seances Acad. Sci., Ser. C, 1972, l274: 1739.
[11] Ishibashi Y, Orihara H. J. Phys. Soc. Jpn., 1992, 61 (12): 4650--4656.
[12] 李金华, 袁宁一, 李坤, 等. 固体电子学研究与进展, 2001, 21 (3): 354--360.
[13] 周青春, 王齐放. 电子器件, 2002, 25 (4): 458--460.
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