采用磁控溅射法制备了不同V含量的纳米TiO2薄膜，利用SEM、XRD、Raman光谱和UV-vis吸收光谱对V掺杂TiO2薄膜的表面形貌、结晶特性、晶格应力和光吸收性能进行了分析.结果表明，V掺杂可促进TiO2薄膜晶粒的定向生长，得到尺寸分布较均匀的哑铃状晶粒，且可抑制薄膜的晶格膨胀和金红石型晶粒的生成.V掺杂TiO2薄膜处于压应力状态，且应力随V含量增加而增大.V掺杂使导带底向带隙延伸，TiO2薄膜光学带隙变窄，光响应范围从紫外区红移到可见光区域，提高了薄膜对可见光的吸收率.
V-doped nano-TiO2 thin films with different V-dopings were prepared by magnetron sputtering method. The microstructure observation and crystallization mechanism of the films were performed by scanning electron microscope（SEM） and X-ray diffractometer(XRD). Raman spectrum and UV-vis transmittance spectrum of the films were also accomplished by Raman spectrometer and ultraviolet-visible spectrometer. The stress in crystal lattice and photo-absorption property of the films were studied. The results indicate that vanadium dopant in nano-TiO2 thin films can induce the oriented crystallization of TiO2 and form sizable dumbbell-state crystal grains. The addition of vanadium to TiO2 thin films suppresses the expanding of crystal lattice and the generation of rutile. The stress in the V-doped nano-TiO2 films increases with the increase of vanadium content. With the addition of vanadium, the energy level of conduction band of the nano-TiO2 lowers and stretches to bandgap. Thus the bandgap of nano-TiO2 is narrowed down. As a result, the optical absorption edge of the V-doped nano-TiO2 thin films shifts from ultraviolet zone to visible one, enhancing the absorptivity of the films on visible light.
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