采用三元Ag-Cu-Ti活性焊料连接常压烧结碳化硅陶瓷，研究了反应温度、保温时间等钎焊工艺对碳化硅陶瓷连接强度的影响，分析了连接界面的微观结构和反应产物. 实验结果表明，在实验范围内，钎焊温度和保温时间对碳化硅陶瓷的连接强度均有峰值，四点弯曲强度最高达到342MPa，随着钎焊温度的升高，界面反应层厚度增加，连接强度提高，但过高的钎焊温度引起焊料的挥发而使连接强度下降. 焊料中的活性元素Ti与碳化硅发生反应在连接界面形成均匀致密的反应层，反应层厚度约1μm，XRD和EDX能谱分析结果表明反应产物是TiC和Ti5Si3.
Sintered SiC ceramics were brazed with itself by ternary Ag-Cu-Ti filler metal foil. Effects of brazing parameters such as temperature, holding time on joining strength, together with interface microstructure and reaction products were investigated. Experimental results indicate that joining strength has peak value with the increasing of brazing temperature and holding time, and the max fourpoint bending strength of SiC/SiC joints reaches 342MPa. The joining strength increases first with the increasing of brazing temperature and holding time due to thickening of the reaction layer, then decreases due to evaporation of the filler metal. A uniform compact reaction layer of about 1μm thickness is found at the interface between SiC and filler metal, which is formed by the reaction of active element Ti of filler metal and SiC substrate. TiC and Ti5Si3 are confirmed as the reactive products by XRD and EDX.
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