以SiCl4和H2为原料，采用低压化学气相沉积（LPCVD）渗硅法在Mo基体表面原位反应制备了MoSi2涂层，研究了沉积温度对MoSi2涂层微观形貌、物相组成、沉积速率、涂层的硬度、涂层与基体结合强度的影响. 研究结果表明：在1100~1200℃下制备的涂层结构致密，由单一MoSi2组成，沉积速率、涂层的硬度以及与基体的结合强度均表现为増加的趋势；当沉积温度高于1200℃，涂层出现开裂现象，由游离Si和MoSi2两相组成，涂层沉积速率、硬度和结合强度均出现下降的趋势. 1100℃以下沉积的主要控制步骤为Si与Mo反应，而1100℃以上Si在涂层中的扩散对沉积过程起控制作用.
MoSi2 coatings were prepared on Mo substrates by low pressure chemical vapor deposition（LPCVD）using SiCl4 and H2 as source gases, in the temperature range from 1000℃ to 1300℃. Effect of deposition temperature on the microstructures, phase composition, deposition process, deposition rates, hardness and the bonding strength between coatings and Mo matrix were studied. It is indicated that the MoSi2 coatings deposited in the temperature range from 1100℃ to 1200℃ are compact consisting of single MoSi2 phase. The deposition rates, hardness and the bonding strength increase with the increase of temperature；however above 1200℃, cracks and Si phase appear in the coating, the deposition rates, hardness and the bonding strength decrease. The deposition process is mainly controlled by the reaction between Si and Mo below 1100℃, while above 1100℃ the diffusion of Si in MoSi2 coatings becomes the controlling step.
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