采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石, 使用化学机械抛光加工衬底表面, 对衬底的结晶质量、光学性能和加工质量进行了研究. 结果显示r面蓝宝石衬底基本性能参数如下：平均半峰宽值为19.4arcsec; 位错密度为5.6×103cm-2, 波长大于300nm时的平均透过率大于80％; 光学均匀性Δn=6.6×10-5; 平均表面粗糙度为0.49nm. 结果表明, 温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高, 达到了GaN外延衬底的标准.
R-plane sapphire used for epitaxial growth of non-polar GaN film was grown by the temperature gradient technique (TGT) method and chemical mechanical method was used to polish the r-plane sapphire substrate. The crystallization quality, optical property and surface roughness of as-obtained r-plane sapphire substrate were investigated. The average full width at half maximum (FWHM) of the substrate is 19.4arcsec and the dislocation density is 5.6×103cm-2. The transmission of the substrate is higher than 80% when the wavelength is longer than 300nm and the optical homogeneity is 6.6×10-5. The average surface roughness of the r-plane sapphire substrate is 0.49nm. The results indicate that as-obtained r-plane sapphire substrate meets the basic standard of GaN substrate.
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