利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果,当Sn/Sb 原子比处于0.22~0.33范围内时,TAO薄膜是p型导电的,在此范围之外,TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(～3.9eV).构造了一个全透明的PN结,其中n区为Sn/Sb原子比为0.5的TAO薄膜, p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物(ITO),p区TAO的电极用Cu薄膜.实验结果表明,由于两种导电类型的TAO薄膜具有相同的禁带宽度,上述透明PN结构具有典型的准同质PN结的整流特性.
Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the band-gap of all TAO films with various Sn/Sb ratios is almost identical (～3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.
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