设计了一系列名义组成为Zn4Sb3-xInx(0～0.08,Δx=0.02)的In掺杂β-Zn4Sb3基块体材料,并用真空熔融-随炉冷却-放电等离子体烧结工艺成功制备出无裂纹的In掺杂单相β-Zn4Sb3基块体材料.300～700 K内材料的电热输运特性表明,In杂质对Zn4Sb3化合物的Sb位掺杂可导致载流子浓度和电导率大幅度增大、高温下本征激发几乎消失和晶格热导率显著降低,x=0.04和0.08的Zn4Sb3-xInx的In掺杂β-Zn4Sb3化合物700K时晶格热导率均仅为0.21W/(m·K).与纯β-Zn4Sb3块体材料相比,所有In掺杂β-Zn4Sb3基块体材料的ZT值均显著增大,x=0.06的Zn4Sb3-xInx的In掺杂β-Zn4Sb3基块体材料700K时ZT值达到1.13,提高了69%.
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