欢迎登录材料期刊网

材料期刊网

高级检索

以商用区熔(ZM)n型Bi2Te3基材料为原料,采用简单研磨结合放电等离子烧结技术(ZM+SPS)和熔体旋甩(MS)结合放电等离子烧结技术(MS+SPS)制备了n型Bi2Te3基块体热电材料.对三种不同工艺制备出样品的微结构、热电性能和力学性能进行了研究.FESEM微结构表征结果表明:区熔样品的晶粒粗大,有较强的取向性;经SPS烧结后,晶粒细化,取向性大为降低;而区熔样品经MS+SPS后,晶粒得到进一步细化,且没有明显的取向性.对三组样品进行的热电性能和抗压强度测试,结果表明:区熔原料最大ZT值为0.72(430K),抗压强度仅为40MPa;经SPS后,样品的最大ZT值为0.68(440K),抗压强度为110MPa,相比区熔样品提高了175%; MS+SPS样品的最大ZT值为0.96(320K),其室温ZT值相比区熔样品提高了64%,抗压强度相比区熔样品提高了400%,达到200MPa.

参考文献

[1] Rowe D M.CRC Handbook of Thermoelectrics.Nashua USA,1995,27:1-18.
[2] Yu Fengrong,Zhang Jianjun,Yu Dongli,et al.Enhanced thermoelectric figure of merit in nanocrystalline Bi2Te3 bulk.J.Appl.Phys.,2009,105(9):094303-1-5.
[3] Seizo Nakajima.The crystal structure of Bi2Te3-xSex.J.Phys.Chan.Solids,1963,24(3):479-485.
[4] Greenaway D L,Harbeke G.Band structure of bismuth telluride,bismuth selenide and their respective alloys.J.Phys.Chan.Solids,1965,26(10):1585-1604.
[5] Ma Yi,Hao Qing,Poudel Bed,et al.Enhanced thermoelectric figure-of-merit in p-type nanostructures bismuth antimony tellurium alloys made from elemental chunks.Nano Lett.,2008,8(8):2580-2584.
[6] Poudel B,Hao Q,Ma Y,et al.High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys.Science,2008,320(5876):634-638.
[7] Lan Yucheng,Poudel Bed,Ma Yi,et al.Structure study of bulk nanograined thermoelectric bismuth antimony telluride.Nano Lett.,2009,9(4):1419-1422.
[8] Tang X F,Xie W J,Li H,et al.Preparation and thermoelectric transport properties of high-performance p-type Bi2Te3 with layered nanostructure.Appl.Phys.Lett.,2007,90(1):012102-1-3.
[9] Xie W J,Tang X F,Yan Y G,et al.Unique nanostructure and thermoelectric performance of melt-spun BiSeTe alloys.Appl.Phys.Lett.,2009,94(10):102111-1-3.
[10] Xie Wenjie,Tang Xinfeng,Yan Yonggao,et al.High thermoelectric performance BiSbTe alloy with unique low-dimentional structure.J.Appl.Phys.,2009,105(11):113713-1-8.
[11] Cao Y Q,Zhao X B,Zhu T J,et al.Syntheses and thermoelectric properties of Bi2Te3/Sb2Te3 bulk nanocomposites with laminated nanostructure.Appl Phys.Lett.,2008,92(14):143106-1-3.
[12] Jiang Jun,Chen Lidong,Yao Qin,et al.Effect of TeI4.content on the thermoelectric properties of n-type Bi-Te-Se crystals prepared by zone melting.Mater.Chem.Phys.,2005,92(1):39-42.
[13] Liao Chien-Neng,Wu Li-Chieh.Enhancement of carrier transport properties of BixSb2-xTe3 compounds by electrical sintering process.Appl.Phys.Lett.,2009,95(5):052112-1-3.
[14] Zhao Li-Dong,Zhang Bo-Ping,Liu Wei-Shu,et al.Effect of mixed grain sizes on thermoelectric performance of Bi2Te3 compound.J.Appl.Phys.,2009,105(2):023704-1-6.
[15] 关振铎,张中太,焦金生.无机材料物理性能.北京:清华大学出版社,2004:81-83.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%