研究了铋硼玻璃掺杂对ZnO-Bi2O3-TiO2系压敏电阻微观结构和非线性特性的影响. 由SEM结果可知: 在900℃烧结时, 低熔点铋硼玻璃通过液相烧结机制能够促进氧化锌晶粒生长和提高晶粒分布的均匀性; 然而, 未熔融的锌硼玻璃通过颗粒阻滞机理阻碍了氧化锌压敏陶瓷晶粒的生长. 当铋硼玻璃掺杂量为2wt%时, 可以得到最佳非线性特性: 电位梯度E1mA= 124.9V/mm, 非线性系数α=46.2, 漏电流密度JL= 0.2μA/cm2. 对铋硼玻璃掺杂压敏电阻来说, 其晶粒生长动力学指数和激活能Q要远小于锌硼玻璃掺杂压敏电阻, 仅为n≈2.15和146.2 kJ/mol. 以上分析表明: 与锌硼玻璃相比, 铋硼玻璃能够更有效的促进氧化锌晶粒生长, 改善ZnO-Bi2O3-TiO2系压敏电阻的微观结构, 提高非线性特性.
The influences of Bi2O3-B2O3 glass additives on the microstructure and nonlinear electrical properties of ZnO-Bi2O3-TiO2-based varistor were investigated. SEM images show that low melting Bi2O3-B2O3 glass can help to increase ZnO grain size and refine microstructure with uniform grain size distribution at 900℃ through liquid phase sintering mechanism, whereas the grain size decreases with increasing ZnO-B2O3 glass addition resulting from non-melting ZnO-B2O3 glass pining the ZnO grain boundaries. The varistor ceramics with 2wt% Bi2O3-B2O3 glass addition own best nonlinear electrical properties with voltage gradient E1mA=124.9V/mm, nonlinear coefficient α=46.2, leakage current density JL=0.2μA/cm2. For Bi2O3-B2O3 glass doped varistor, kinetic exponent nB and apparent activation energy QB are only 2.15 and 146.2kJ/mol which are much lower than that of ZnO-B2O3 glass doped varistor. The results reveal that Bi2O3-B2O3 glass doping is more effective in improving the microstructure and electrical properties of ZnO-Bi2O3-TiO2-based varistor than ZnO-B2O3 glass doping.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] | |
| [7] | |
| [8] | |
| [9] | |
| [10] | |
| [11] | |
| [12] | |
| [13] |
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