以铝(A1)粉末和三氯化硼(BCl3)为前驱体,以H2和Ar分别作为还原气体和保护气体,在高温水平电炉中采用化学气相沉积方法在Si衬底上原位制备了大量的AlB12纳米棒.利用扫描电镜(SEM),高分辨透射电镜(HRTEM),选区电子衍射(SAED),能谱(EDS)表征了AlB12纳米棒的形貌、晶体结构和成份.SEM结果表明纳米棒的直径在100～350 nm之间,长度从几百个纳米到几个微米,TEM、SAED和EDS结果显示AlB12纳米棒沿着[020]方向生长.最后根据纳米线生长过程探讨了AlB12纳米棒的自催化生长机理.
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