随着CVD人工合成金刚石薄膜质量的不断提高,其优异的电学性能在高频、大功率领域特别是场效应管中的应用受到了极大地关注.制作金刚石薄膜场效应管,电子级质量的薄膜、形成良好的接触以及半导体的形成是其关键技术.以此为基础,为达到其在高频大功率下使用的目的,减小栅长和各种寄生参数以及提高耐压和散热能力成为决定其性能优劣的关键因素.本文针对金刚石薄膜场效应管制作的关键技术的突破、H端基表面导电机制、目前高频大功率场效应管的水平以及出现的一些相关在研热点进行了综述,展望了其巨大的优越性和广阔的应用前景.
参考文献
[1] | Kasu M,Ueda K,Yamauchi Y.Diamond-based RF power transistors fundamentals and applications.Diamond and Related Materials,2007,16(4-7):1010-1015. |
[2] | 李建国,丰杰,梅军.超纳米金刚石薄膜及其在MEMS上的应用研究进展.材料导报,2008,22(7):1-4. |
[3] | Chaniotakis N,Sofikiti N.Novel semiconductor materials for the development of chemical sensors and biosensors:a reiew.Analytica Chimica Acta,2008,615(1):1-9. |
[4] | Tallaire A,Achard J,Silva F,et al.Homoepitaxial deposition of high-quality thick diamond films:effect of growth parameters.Diamond and Related Materials,2005,14(3-7):249-254. |
[5] | Tang C J,Pereira S M S,Fernandes A J S,et al.Synthesis and structural characterization of highly 〈100〉-oriented { 100}-faceted nanocrystalline diamond films by microwave plasma chemical vapor deposition.Journal of Crystal Growth,2009,311(8):2258-2264. |
[6] | Bauer T,Schreck M,Sternschulte H,et al.High growth rate homoepitaxial diamond deposition on off-axis substrates.Diamond and Related Materials,2005,14(3-7):266-271. |
[7] | Evan D A,Roberts O R,Williams G T,et al.Diamond-metal contacts interface barriers and real-time characterization.Journal of Physics Condensed Matter,2009,21(36):1-12. |
[8] | Evans D A,Roberts O R,Vearey-Roberts A R.Direct observation of Schottky to Ohmic transition in Al-diamond contacts using real-time photoelectron spectroscopy.Applied Physics Letters,2007,91(13):132114-1-3. |
[9] | Wade M,Muret P,Omn'es F,et al.Technology and electrical properties of ohmic contacts and Schottky diodes on homoepitaxial layers grown on(100)diamond surfaces.Diamond and Related Materials,2006,15(4-8):614-617. |
[10] | Kato H,Watanabe H,Yamasaki S,et al.N-type doping on (001)-oriented diamond.Diamond and Related Materials,2006,15(48):548-553. |
[11] | Schwitters M,Dixon M P,Tajani A,et al.Diamond-MESFETsSynthesis and Integration.The 2nd European Radar Conference,Paris,2005. |
[12] | Aleksov A,Kubovic M,Kaeb N,et al.Diamond field effect lransistors-concepts and challenges.Diamond and Related Materials,2003,12(3-7):391-398. |
[13] | El-Hajj H,Denisenko A,Bergmaier A,et al.Characteristics of boron δ-doped diamond for electronic applications.Diamond and Related Materials,2008,17(4/5):409-414. |
[14] | El-Hajj H,Denisenko A,Kaiser A,et al.Diamond MISFET based on boron delta-doped channel.Diamond and Related Materials,2008,17(7-10):1259-1263. |
[15] | Landstrass M I,Ravi K V.Resistivity of chemical vapor deposited diamond films.Applied Physics Letter,1989,55(10):975-977. |
[16] | Nebel C E,Ertl F,Sauerer C,etal.Low temperature properties of the p-type surface conductivity of diamond.Diamond and Related Materials,2002,11(3-6):351-354. |
[17] | Nebel C E,Rezek B,Zrenner A,et al.Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond.Diamond and Related Materials,2004,13(11/12):2031-2036. |
[18] | Kubovic A,Denisenko A,Ebert W.Electronic surface barrier characteristics of H-terminated and surface conductive diamond.Diamond and Related Materials,2004,13(4-8):755-760. |
[19] | Kasu M,Ueda K,Yamauchi Y.Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination.Applied Physics Letters,2007,90(4):043509-1-3. |
[20] | Kasu M,Ueda K,Kageshima H.Gate interfacial layer in hydrogenterminated diamond field-effect transistors.Diamond and Related Materials,2008,17(4/5):741-744. |
[21] | Kubovic M,Kasu M,Yamauchi Y.Structural and electrical properties of H-terminated diamond field-effect translstor.Diamond and Related Materials,2009,18(5-8):796-799. |
[22] | Kohn E,Adamschik M,Schmid P,et al.Prospects of diamond devices.J.Phys.D:Appl.Phys.,2001,34(16):R77-1-10. |
[23] | Denisenko A,Kohn E.Diamond power devices:concepts and limits.Diamond and Related Materials,2005,14(3-7):491-498. |
[24] | Miyata K,Nishemura K,Kobashi K.Devic'e simulation of submicrometer gate p+-i-p+ diamond transistors.IEEE Trans.Electron Devices,1995,42(11):2010-2014. |
[25] | Kawakami N,Yokota Y,Tachibana T,et al.Fabrication of a submicron source-drain gap for p-i-p field effect transistors using epitaxial diamond layers.Diamond and Related Materials,2004,13(11/12):1939-1943. |
[26] | Kawakami N,Yokota Y,Hayashi K,et al.Device operation of p-i-p type diamond metal-insulator-semiconductor field effect transistors with submicrometer channel.Diamond and Related Materials,2005,14(3-7):509-513. |
[27] | Umezawa H,Taniuchi H,Arima T.Potential applications of surface channel diamond field-effect transistors.Diamond and Related Materials,2001,10(9/10):1743-1748. |
[28] | Ishizaka H,Umezawa H,Taniuchi H.DC and RF characteristics of 0.7-mm-gate-length diamond metal-insulator-semiconductor field effect transistor.Diamond and Related Materials,2002,11(3-6):378-381. |
[29] | Aleksov A,Denisenko A,Spitzberg U.RF performance of surface channel diamond FETs with sub-micron gate length.Diamond and Related Materials,2002,11(3-6):382-386. |
[30] | Kubovic M,Kasu M,Kallfass I.Microwave performance evaluation of diamond surface channel FETs.Diamond and Related Materials,2004,13(4-8):802-807. |
[31] | Hirama K,Miyamoto S,Matsudaira H,et al.Fabrication of T-shaped gate diamond metal-insulator-semiconductor field-effect transistors.Jpn.J.Appl.Phys.,2006,45(7):5681-5684. |
[32] | Kohn E,Denisenko A.Concepts for diamond electronics.Thin Solid Films,2007,515(10):4333-4339. |
[33] | Miyamoto S,Matsudaira H,lshizaka H,et al.High performance diamond MISFETs using CaF2 gate insulator.Diamond and Related Materials,2003,12(3-7):399-402. |
[34] | Kasu M,Ueda K,Ye H.2W/mm output power density at 1 GHz for diamond FETs.Electronics Letters,2005,41(22):1249-1250. |
[35] | Kasu M,Ueda K,Ye H,et al.High RF output power for H-terminated diamond FETs.Diamond and Related Materials,2006,15(4-8):783-786. |
[36] | Kueck D,El-Hajj H,Kaiser A,et al.Surface-channel MESFET with boron-doped contact layer.Diamond and Related Materials,2008,17(4/5):732-735. |
[37] | Rezek B,Kozak H,Kromka A.Stabilizing diamond surface conductivity by phenol-formaldehyde and acrylate resins.Thin Solid Films,2009,517(13):3738-3741. |
[38] | Kueck D,Schmidt A,Denisenko A,et al.Analysis of passivated diamond surface channel FET in dual-gate configurationLocalizing the surface acceptor.Diamond and Related Materials,2010,19(2/3):166-170. |
[39] | Kueck D,Jooss S,Kohn E.Technology of passivated surface channel MESFETs with modified gate structures.Diamond and Related Materials,2009,18(10):1306-1309. |
[40] | Umezawa H,Arima T,Fujihara N F.Performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field effect transistors.Jpn.J.Appl.Phys.,2002,41:2611-2614. |
[41] | Madaleno J C,Trippe S C,Pereira L.Comparison of the electrical behavior of Schottky diodes built on the nucleation and growth surfaces of polycrystalline diamond.Diamond and Related Materials,2007,16(4-7):926-929. |
[42] | Madaleno J C,Pereira L,Lavareda G,et al.A MIS transistor using the nucleation surface of polycrystalline diamond.Diamond and Related Materials,2008,17(4/5):768-771. |
[43] | Kubovic M,Janischowsky K,Kohn E.Surface channel MESFETs on nanocrystalline diamond.Diamond and Related Materials,2005,14(3-7):514-517. |
[44] | Calvani P,Corsaro A,Girolami M.DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond.Diamond and Related Materials,2009,18(5-8):786-788. |
[45] | Ueda K,Kasu M,Yamauchi Y,et al.Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmaxof 120 GHz.IEEE Electron Device Letters,2006,27(7):570-572. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%