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采用脉冲激光淀积法在硅基氧化铝纳米有序孔膜版介质上(膜版孔径平均尺寸25 nm,内生长Pt纳米线作为底电极一部分)制备了纳米结构的BaTiO3铁电膜(膜厚25nm),并对其铁电和介电性能以及微结构进行了表征.结果表明,BaTiO3铁电纳米膜的介电常数随着测量频率的增加(103~106 Hz)从196缓慢下降到190;介电损耗在低频区域(103~105 Hz)从0.005缓慢增加到0.007,而在高频率区域(>105 Hz)快速增加到0.013.薄膜的剩余极化强度约为5μC/cm2,矫顽场强约为680 kV/cm.剖面(S)TEM像表明,BaTiO3铁电纳米膜与Pt纳米线(底电极)直接相连,它们之间的界面具有一定程度的弯曲.为兼顾氧化铝纳米有序孔膜版内的金属纳米线有序分布及BaTiO3纳米膜的结晶度,选择合适的退火温度是制备工艺中的关键因素.

参考文献

[1] Scott J F,Araujo C A.Ferroelectric memories.Science,1989,246(4936):1400-1405.
[2] International Technology Roadmap for Semiconductors.http://public.itrs.net.2010.03.05.
[3] Gruverman A,Kholkin A.Nanoscale ferroelectrics:processing,characterization and future trends.Rep.Prog.Phys.,2006,69(8):2443-2474.
[4] Alexe M,Hamagea C,Hesse D.Non-conventional micro-and nanopatterning techniques for electroceramics.J.Electronceram.,2004,12(1/2):69-88.
[5] Nagarajan V,Roytburd A,Stanishevsky A,et al.Dynamics of ferroelastic domains in ferroelectric thin films.Nat.Mater.,2003,2(1):43-47.
[6] Bühlmann S,Dwir B,Baborowski J,et al.Size effect in mesoscopic epitaxial ferroelectric structures:increase of piezoelectric response with decreasing feature size.Appl.Phys.Lett.,2002,80(17):3195-3197.
[7] Harnagea C,Alexe M,Schilling J,et al.Mesoscopic ferroelectric cell arrays prepared by imprint lithography.Appl.Phys.Lett.,2003,83(9):1827-1829.
[8] Seol K S,Tomita S,Takeuchi K,et al.Gas-phase production of monodisperse lead zirconate titanate nanoparticles.Appl.Phys.Lett.,2002,81(10):1893-1895.
[9] Szafraniak I,Harnagea C,Scholz R,et al.Ferroelectric epitaxial nanocrystals obtained by a self-patterning method.Appl.Phys.Lett.,2003,83(11):2211-2213.
[10] Morrison F D,Luo Y,Szafraniak I,et al.Ferroelectric nanotubes.Rev.Adv.Mater.Sci.,2003,4(2):114-122.
[11] 朱信华,朱建民.铁电纳米材料和纳米结构研究的进展.电子显微学报,2007,26(3):238-258.
[12] Zhu X H.Recent patents on perovskite ferroelectric nanostructures.Recent Patents on Nanotechnology,2009,3(1):42-52.
[13] Zhu X H,Evans P R,Byme D,et al.Perovskite lead zirconium titanate nanorings:towards nanoscale ferroelectric "solenoids"?Appl.Phys.Lett.,2006,89(12):122913-1-3.
[14] Evans P R,Zhu X H,Baxter P,et al.Toward self-assembled ferroelectric random access memories:hard-wired switching capacitor arrays with almost Tb/in.2 densities.Nano Lett.,2007,7(5):1134-1137.
[15] Barsoum M W.Fundamentals of Ceramics.New York:The McGraw-Hill Companies,Inc.,1997:526-546.
[16] Iijima K,Tershim T,Yayamoto K,et al.Appl.Phys.Lett.,1990,56(6):527-529.
[17] Mertz W G.The dielectric properties of BaTiO3 at low temperatures.Phys.Rev.,1951,81(6):1064-1065.
[18] Sharma H B,Sarma H N K,Mansingh A.Ferroelectric and dielectric properties of Sol-Gel processed barium titanate ceramics and thin films.J.Mater Sci.,1999,34(6):1385-1390.
[19] Mansingh A,Rai G.Effect of surface layers on the dielectric properties of NaNO2 powders.Can.J.Phys.,1976,54(20):2050-2055.
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