通过在YBCO前驱溶液中加入醋酸钆(Gd(CH3COO)3),使元素Gd部分取代Y,成功地制备了Y0.5Gd0.5BCO薄膜,该薄膜成分单一且具有很好的C轴取向.通过对Y0.5Gd0.5BCO薄膜和YBCO、GdBCO薄膜的超导件能比较发现,虽然Y0.5Gd0.5BCO薄膜的临界转变温度(Tc)(约为90.5 K)较YBCO和GdBCO薄膜有所下降,但是在65K、自场下,Y0.5Gd0.5BCO薄膜具有最高的临界电流密度(Jc)值,为4.87MA/cm2.且随着外加磁场的增加,Jc值提高的较多.在3T的磁场下,Y0.5Gd0.5BCO薄膜的Jc值分别是纯GdBCO和YBCO薄膜的1.8倍和5.1倍.此外,替代还有效提高了薄膜的磁通钉扎力.
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