欢迎登录材料期刊网

材料期刊网

高级检索

Si3N4是一种具有多种优越物化性能的多功能材料.采用基于密度泛函理论(DFT)的第一性原理计算对Si3N4的高低温相(β、α)进行了对比研究.对于d相,计算得晶格常数a=0.7678nm、c=0.5566nm,弹性刚度系数C11=4.232×1011N/m2、c33=4.615×1011N/m2,压电应变常量d33=0.402pC/N;而对于β相,a=0.7536nm、c=0.2874nm,弹性刚度系数c11=4.241×1011N/m2、C33=5.599×1011N/m2,压电应变常量则几乎为零.分析表明Si3N4的α、p两相均为高硬高强材料,这与其结构由四面体组成的网络架构有关.而Si3N4高低温相的压电性能都很差,特别是β相的压电系数几乎为零,这与其结构的对称性有关,高温相结构的对称性更高,形变引起的离子位移响应抵消更多.

参考文献

[1] Brown C S,Taylor R,Thomas L A.Piezoelectric materials,a review of progress.Proc.IEEB,1962,43(109):193-211.
[2] Philippot E,Goiffon A,Ibanez A.Structure deformations and existence of the alpha-beta transition in MxO4 quartz-like materials.Journal of Solid State Chemistry,1994,110(2):356-362.
[3] King-Smith R D,Vanderbilt D.Theory of polarization of crystalline solids.Physical Review B,1993,47(3):1651-1654.
[4] Zhang Tao,Zheng Yanqing,Chen Jianjun,et al.First-principles study of microscopic origin of piezoelectric effect in alpha-quartz.Japanese Journal of Applied Physics,2006,45(11):8755-8759.
[5] Xin Jun,Zheng Yanqing,Shi Erwei.Piezoelectricity of zinc-blende and wurtzite structure binary compounds.Applied Physics Letters,2007,91(11):112902,1-3.
[6] 潘虹哲.β相氮化硅材料的第一性原理研究.成都:四川师范大学硕士论文,2006.
[7] 孙钦英,朱秀英.发动机用新材料--氮化硅陶瓷.耐火材料,1994,28(2):5.
[8] Flynn A M,Tavrow L S,Bart S F,et al.Piezoelectric Micromotors for Microrobots.Journal of Microelectromechanical Systems,1992,1(1):44-52.
[9] Choi W S,Smits J G.Dynamic behavior of zno on Si3N4 bimorphs.IEEE 1992 Ultrasonics Symposium:Proceedings,1992(1/2):319-322.
[10] Mohamed H,Polla D,Ebbini E.Micromachined Piezoelectric Ultrasonic Imaging Transducer.Meres:2001 Microelectromechanical Systems Conference,2002:95-98.
[11] Smits J G,Choi W S.Very large deflection with quadratic voltage dependence of ZnO on Si3N4 bimorph.IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control,1992,39(2):302-304.
[12] Yoon Y S,Kim J H,Schmidt A M.RuO2/Ru electrode on Si3N4/Si substrate for mictoelectromechanical systems devices based on Pb(Zr1-xTix)O3 film and surface micromachining.Journal of Materials Science-Materials in Electronics,1998,9(6):465-471.
[13] 王奇,赵湛,耿照新.基于Si3N4薄膜的压力传感器.传感器与微系统,2006,25(3):7l-73.
[14] Kim Y S,Jang S,Lee C S.Thermo-piezoelectric Si3N4 cantilever array on CMOS circuit for high density probe-based data storage.Sensors and Actuators a-Physical,2007,135(1):67-72.
[15] Bai S Y,Tang Z A,Huang Z X.Thermal charactenzation of Si3N4 thin films using transient thermorefiectance technique.IEEE Transactions on Industrial Electronics,2009,56(8):3238-3243.
[16] Bhatt V,Chandra S.Silicon nitride films deposited by RF sputtering for microstructure fabrication in MEMS.Journal of Electronic Materials,2009,38(9):1979-1989.
[17] Liu A Y,Cohen M L.Structural-properties and electrouic-structure of low-compressibility materials-beta-Si3N4 and hypothetical betaC3N4.Physical Review B,1990,41(15):10727-10734.
[18] Mirgorodsky A P,Baraton M I,Quintard P.Lattice-dynamics and prediction of pressure-induced incommensurate instability of a beta-Si3N4 lattice within a simple mechanical model.Physical Review B,1993,48(18):13326-13332.
[19] [191 Ren S Y,Ching W Y.Electronic-structures of beta-si/icon and alpha-silicon uitride.Physical Review B,1981,23(10):5454-5463.
[20] Xu Y N,Ching W Y.Electronic-structure and optical-properties of alpha-phase and beta-phase of silicon-nitride,silicon oxynitride,and with comparison to silicon dioxide.Physical Review B,1995,51(24):17379--17389.
[21] Hohenberg P,Kohn W.Inhomogeneoas electron gas.Physical Review,1964,136(3B):864-871.
[22] Kohn W,Sham L J.Serf-consistent equations including exchange.and correlation effects.Physical Review,1965,140(4A):1133-1138.
[23] Gonze X,Lee C.Dynamical matrices,born effective charges,dielecttic permittivity tensors,and interatomic force constants from density-functional perturbation theory.Physical Review B,1997,55(16):10355-10368.
[24] Vanderbilt D,Hamann D R.Systematic treatment of displacements,strains,and electric fields in density-functional perturbation theory.2005,72:035105-1-13.
[25] Boyer L L,Cohen R E,Krakauer H,et al.1st principles calculations for ferroelectrics.Ferroelectrics,1990,111(1):1-7.
[26] Marchand R,Laurent Y,Land J,et al.Structure of alpha-silicon nitride.Acta Crystallographica Section B,1969,25:2157-2159.
[27] Grun R.The crystal structure of β-Si3N4;structural and stability considerations between α-and β-Si3N4.Acta Crystallographica Section B,1979,35(4):800-804.
[28] Wang W X,IA D H,Lin Z C,et al.Strong piezoelectricity in nanosized silicon-nitride prepared by laser-induced chemical vapordeposition.Applied Physics Letters,1993,62(3):321-322.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%