在氮气气氛下、保温10min、948~1098K利用活性金属铸接方法制备铝/氮化铝陶瓷基板, 用力学试验机、扫描电子显微镜、高温金相光学显微镜和原子力显微镜对铝/氮化铝陶瓷的结合强度和机理进行研究. 结合温度低于973K时, 铝和氮化铝陶瓷之间的剥离强度随结合温度升高线性增大, 当结合温度超过973K时, 结合温度对强度影响很小, 铝和氮化铝陶瓷之间的结合强度约为49N/mm, 铝和氮化铝陶瓷之间的结合为物理湿润和化学反应湿润共同作用.
Al/AlN substrate was produced by diecasting bonding process with the bonding time of 10 min in the range of 948K to1098K under N2 atmosphere. The bonding mechanism and strength were investigated by mechanic testing equipment, high-temperature metallographic microscope, AFM and SEM. When the bonding temperature is increased below 973K,the peeling strength of the aluminium with the AlN ceramic substrate rises linearly. While the bonding temperature is above 973K, the temperature influence on the bonding strength is not significant. The peeling strength ofthe pure aluminium with the AlN ceramic substrate is about 49N/mm. The bonding mechanism between aluminium and aluminium nitride can be ascribed to physical and chemical reaction wetting.
参考文献
| [1] | Woohyun Jung, Hueup Song, Sang Whan Park, et al. Variation of contact angles with temperature and time in theAl-Al2O3. Met all. and Mater. Trans., 1996,27:51-55. [2] Ning X S, Ogawa Y, Sugauma K. Interface of aluminum/ceramic power substrates manufactured by casting-bonding process. Mat. Res. Soc. Symp. Proc., 1997,44(5):101-106. [3] Nagata C, Ning X S, Sakuraba M, et al. Process for Preparinga Ceramic Electronic Circuit Board and Process for Preparing Aluminum or Aluminum Alloy Bonded Ceramic Material. US Patent No. 5965193, 1999.10.12. [4] Lindemann Andreas, Strauch Gerhard. Properties of direct aluminum bonded substrates for power semiconductor components. IEEE Transactions on Power Electronics, 2007,22(2):384-391. [5] Peng R, Zhou H P, Ning X S,et al. Bonding Al on Al2O3 substrate. Key Engineering Materials, 2002,224 - 226:755-760. [6] 彭 榕, 周和平, 宁晓山, 等(PENG Rong, et al). Al/Al2O3陶瓷接合基板的制备及性能研究. 无机材料学报(Journal of Inorganic Materials), 2002,17(4):731-736. [7] Peng R, Zhou H P, Ning X S,et al. The study and fabrication of Al/AlN substrate. Materials Letters, 2002,56(4): 465-470. [8] 彭 榕, 周和平, 宁晓山, 等(PENGRong, et al). 铝/氮化铝电子陶瓷基板的制备及性能的研究. 无机材料学报(Journal of Inorganic Materials), 2002,17(6):1203-1208. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%