超声波作用下, 采用热壁物理气相沉积法在相对较低温度下(<90℃)成功制备了(00l)取向多晶碘化汞膜, 分析了超声工艺对(00l)取向多晶碘化汞膜质量的影响. 采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、拉曼光谱仪(Raman)对(00l)取向多晶碘化汞膜进行了表征. 结果表明, 超声波作用下, 相对较低的生长温度能够获得高质量(00l)取向多晶碘化汞膜, 同时超声波工艺不仅能够明显改善多晶碘化汞厚膜的质量而且能提高生长速率.
Polycrystalline (00l)-oriented HgI2 films were prepared on ITO glass substrate by the modified Water Bath Hot Wall Physical Vapor Deposition method in the ultrasonic wave field.High quality polycrystalline (00l)-oriented HgI2 films, growing along the (00l) crystal plane with columnar and uniform grains, were obtained. Effects of growth process parameters on the quality of(00l)-oriented polycrystalline HgI2 films were discussed. The microstructure and surface morphology of HgI2 films were characterized by X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum. The results indicatedthat ultrasonic wave could improve the quality of HgI2 films and decrease the deposition temperature of HgI2 films with increasing ultrasonic frequency from 0 to 59kHz. The growth rate of HgI2 filmswas increased with the frequency of ultrasonic wave.
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