采用快速法生长了掺杂不同Cr3+浓度的KDP晶体,测试了KDP晶体(100)面在不同Cr3+掺杂浓度下的生长速度及死区,表征了Cr3+掺杂的KDP晶体的Cr3+元素分布、透过光谱、散射颗粒分布和光损伤阈值.实验表明Cr3+易吸附在晶体(100)面,从而增大了(100)生长死区,并降低了(100)面生长速度.Cr3+使快速生长的晶体产生柱、锥面生长区分界线.元素分析表明Cr3+更容易通过柱面生长进入晶体,从而导致晶体在可见光波段及紫外波段透过率的降低,最明显的是在220、450和650 nm三处吸收峰的出现.Cr3+进入晶体后使晶体中散射颗粒增多,基频和三倍频脉冲激光照射下晶体的损伤阈值随Cr3+掺杂浓度的增加而降低,且柱面区的损伤阈值要低于锥面区的损伤阈值.
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