采用红外透过显微镜(IRTM)观察了不同条件下生长的CdZnTe晶体中微米级富Te颗粒.结合实际生长条件分析了不同富Te颗粒的产生以及形态演化.通过低温光致发光(PL)谱研究了CdZnTe晶体中杂质、缺陷的状态,以及晶体的结晶质量,并测试了相应晶体的电阻率.归纳出不同富Te颗粒的产生与对应晶体10 K温度下PL谱中特征发光峰之间的关系.研究表明:富Te条件下生长的晶体存在圆形、六边形以及三角形富Te颗粒,PL谱中(D0,X)峰强度占主导;按化学计量比生长的晶体存在十字交叉的富Te颗粒,PL谱中DAP峰强度占主导;Cd过量生长的晶体存在星形富Te颗粒,PL谱中(D0,X)半峰宽较宽.
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