采用氯磺酸作为磺化试剂,在多壁碳纳米管上接枝氯磺酰基,之后通过乙二胺的胺解反应,制备出胺基修饰的多壁碳纳米管MWCNT-NH2,并进一步与氯磺酰基酞菁铜反应制备出MWCNT-Pc复合物.产物采用红外光谱,紫外可见,拉曼光谱,X射线光电子能谱,循环伏安,热重分析等进行了表征.结果表明,MWCNT-NH2上磺酰胺基接枝在MWCNT表面,而MWCNT-Pc上的酞菁基团是通过MWCNT-NH2上的酰胺基团与Pc形成复合物,碳纳米管上约38个碳原子结合一个磺酸基酞菁分子；该MWCNT-Pc复合物的热稳定性较MWCNT-NH2低；利用喷涂法构筑了ITO/MWCNT-Pc光电极,光电性能的研究结果表明在AM1.5光照条件下,光电压及光电流分别为0.434V和0.158mA/cm2;在320nm处的IPCE达19.8％,具有较优良的光电转化性能.根据测得的MWCNT-Pc的能带结构,推知MWCNT-Pc的光诱导电子转移过程是Pc端基发生光激发电子跃迁,此后电子转移到MWCNTs上并进一步传递到ITO,完成电荷分离.
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