石墨烯具有优异的物理和电学性能, 已成为物理和半导体电子研究领域的国际前沿和热点之一. 本文简单介绍了石墨烯的物理及电学特性, 详细评述了在众多制备方法中最有希望实现石墨烯大面积、高质量的外延生长技术, 系统论述了不同SiC和金属衬底外延生长石墨烯的研究进展, 并简要概述了石墨烯在场效应晶体管、发光二极管、超级电容器及锂离子电池等光电器件方面的最新研究进展. 外延生长法已经初步实现了从纳米、微米、厘米量级石墨烯的成功制备, 同时可实现其厚度从单层、双层到少数层的调控, 有望成为高质量、与传统电子工艺兼容、低成本、大面积的石墨烯宏量制备技术, 为其器件应用奠定基础.
Due to its outstanding physical and electrical properties, graphene has become one of the hot research topics and frontiers in the fields of physics and semiconductor electronics. The physical and electrical properties of graphene were briefly introduced. A comprehensive review was presented to the current research activities concentrated on the epitaxial growth of graphene which could be the most promising strategy among the reported methods to meet the challenge for mass production of graphene with high quality. A systematical discussion was then presented to the epitaxial growth of graphene by using various substrates of SiC and metals. By the end of this article, an overview was made on the recent applications of graphene in opto/electronic devices, such as field-effect transistors, light emitting diodes, supercapacitors and lithium-ion batteries. It is accepted that not only growth of graphene with sizes from nanometer to centimeter could be achieved, but also the thicknesses with monolayer to a few layers could be successfully tailored via epitaxial growth of graphene on SiC/metal substrates. It is promised that the strategy of epitaxial growth could accomplish the mass production of graphene with high quality, low cost and compatibility to the conventional electronic process, which lays the significant foundations for the applications of graphenes in devices.
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