射频磁控溅射制备HfLaO薄膜结构和光学性能研究

无机材料学报, 2011, 25(12): 1281-1286. doi: 10.3724/SP.J.1077.2011.01281

射频磁控溅射制备HfLaO薄膜结构和光学性能研究

李智 ^1, , 苗春雨 ^2, , 马春雨 ^3, , 张庆瑜 ^4,

1.大连大学机械工程学院,大连,116622

2.大连理工大学物理与光电工程学院,大连,116023

3.大连理工大学物理与光电工程学院,大连,116023

4.大连理工大学物理与光电工程学院,大连,116023

基金项目: 国家自然科学基金(10605009;10774018) 中央高校基本科研业务专项基金(DUT11LK44) 辽宁省教育厅高校科研计划项目(2008049)

关键词： HfLaO薄膜 , 磁控溅射 , 热学稳定性 , 光学性能

Structural and Optical Properties of HfLaO Films Prepared by RF Magnetron Sputtering

采用射频磁控溅射技术制备HfLaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌.结果表明:沉积态HfLaO(La:25％～37％)薄膜均为非晶态,随着La掺入量的增加,HfLaO薄膜的结晶化温度逐渐升高,HfLaO(La-37％)薄膜经900℃高温退火后仍为非晶态,具有优良的热稳定性,AFM形貌分析显示非晶薄膜表面非常平整.随着 La 掺入量的增加,HfLaO薄膜的透射率先降后增,在可见光范围薄膜均保持较高的透射率(82％以上).HfLaO薄膜的折射率为1.77-1.87.随着La掺入量的增加,HfLaO薄膜的折射率呈先增后降的变化趋势,同时HfLaO薄膜的Eg逐渐降低,分别为5.9eV(La～17％)、5.87eV(La～25％)、5.8eV(La～33％)和5.77eV(La～37％).

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