采用化学气相沉积法制备了块体非晶态Si-C-N陶瓷. 用TG/DSC、XRD、SEM和TEM等技术方法研究了所制备的Si-C-N陶瓷的热行为. 研究结果表明: 在热处理过程中, 非晶态Si-C-N首先发生相分离, 分离后的一种相呈颗粒状; β-SiC就是从这种颗粒状的分离相中形成. 在热处理条件下, 非晶Si-C-N的晶化温度约为1200℃; 在加热速率为20℃/min的连续加热条件下, 其晶化温度为1372.6℃. β-SiC在1200℃首先形成, β-Si3N4和α-SiC则在1500℃形成. 在扫描电镜观察中, 热处理后的Si-C-N中出现一种类似于层状的组织, 这种组织的晶化程度较高.
The amorphous bulk Si-C-N ceramic was prepared by chemical vapor deposition (CVD). The thermal behaviors of as-prepared Si-C-N ceramic were investigated using TG/DSC, XRD, SEM and TEM. The phase separation firstly occurred in amorphous Si-C-N during the heat treatment, and one of separating phases appeared granular. β-SiC was formed in the granular separating phase. The amorphous Si-C-N began to crystallize at about 1200℃ when the ceramic exposed to the heat treatment. The crystallization temperature was about 1372.6℃, which was determined by DSC under the condition of continuous heating at a heating rate of 20℃/min. β-SiC was found at 1200℃, while β-Si3N4 and α-SiC were formed at about 1500℃. A laminate-like structure appears in the heat-treated Si-C-N. This kind of structure was proved to be the highly crystallized Si-C-N.
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