欢迎登录材料期刊网

材料期刊网

高级检索

采用氧等离子体辅助脉冲激光沉积方法(PLD)在硅衬底上,制备出高度(001)取向的钙钛矿相结构钛铌镁酸铅(PMN-PT)薄膜.研究了氧等离子体辅助对PMN-PT薄膜相结构、微观形貌和电学性能的影响.结果表明,通过在薄膜沉积过程中引入高活性的氧等离子,可以有效地提高PMN-PT薄膜的结晶质量和微观结构.未采用氧等离子体辅助PLD方法制备PMN-PT薄膜的介电常数(10 kHz)和剩余极化(2Pr)分别为1484和18 μC/cm2,通过采用氧等离子体辅助,其介电常数和剩余极化分别提高至3012和38 μC/cm2.

Lead magnesium niobate-lead titanate (PMN-PT) ferroelectric thin films with composition near the morphotropic phase boundary (MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD).Highly (001)-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were obtained.The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process.With the use of oxygen plasma,the dielectric constant of the PMN-PT thin film is increased from 1484 to 3012,the remnant polarization (2Pr) changes from 18μC/cm2 to 38 μC/cm2.

参考文献

[1] Zhao X Y,Fang B J,Cao H,et al.Dielectric and piezoelectric performance of PMN-PT single crystals with compositions around the MPB:influence of composition,poling field and crystal orientation.Mat.Sci.Eng.B-Solid,2002,96(3):254-262.
[2] Park S E,Shrout T R.Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals.J.Appl.Phys.,1997,82(4):1804-1811.
[3] Dawber M,Rabe K M,Scott J F.Physics of thin-film ferroelectric oxides.Rev.Mod.Phys.,2005,77(4):1083-1130.
[4] Lin T,Meng X J,Sun J T,et al.Effect of LaNiO3 buffer layers on the structure and electrical properties of Sol-Gel-derived Pb(Mg1/3Nb2/3)O3PbTiO3 thin films.Appl.Phys.A-Matter,2005,81(5):1025-1028.
[5] Herdier R,Detalle M,Jenkins D,et al.The properties of epitaxial PMNT thin films grown on SrTiO3 substrates.J.Cryst.Growth,2008,311(1):123-127.
[6] Tantigate C,Lee J,Safari A.Processing and properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin-films by pulsed-laser deposition.Appl.Phys.Lett.,1995,66(13):1611-1613.
[7] Wu F,Li X M,Yu W D,et al.Preparation,microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 films on different epitaxial bottom electrodes buffered Si substrates.J.Crystal Growth,2008,310(3):575-578.
[8] Laha A,Bhattacharyya S,Krupanidhi S B.Impact of microstructure on dielectric properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films.Mat.Sci.Eng.B-Solid,2004,106(2):111-119.
[9] Bu S B,Lee M K,Eom C B,et al.Perovskite phase stabilization in epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 films by deposition onto vicinal (001) SrTiO3 substrates.App. Phys. Lett.,2001,79(21):3482-3484.
[10] Tantigate C,Safari A.Preparation of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on silicon substrates by pulsed laser deposition.Microelectron Eng.,1995,29(1-4):115-118.
[11] Nakamura T,Masuda A,Morimoto A,et al.Influence of buffer layers on lead magnesium niobate titanate thin films prepared by pulsed laser ablation.Jpn.J.Appl.Phys.,1996,35(9A):4750-4754.
[12] Chen T.L,Li X M,Zhang X.Epitaxial growth of atomic-scale smooth Ir electrode films on MgO buffered Si(100) substrates by PLD.J.Crystal Growth,2004,267(1/2):80-84.
[13] Chen T L,Li X M,Zhang X,et al.Preparation of singlecrystal-like MgO films on Si and orientation control of platinum films on MgO/Si.Appl.Phys.A-Matter,2004,79(8):1857-1860.
[14] Donnelly N J,Catalan G,Morros C,et al.Dielectric and electromechanical properties of Pb(Mg1/3,Nb2/3)O3-PbTiO3 thin films grown by pulsed laser deposition.J.Appl.Phys.,2003,93(12):9924-9929.
[15] Maria J P,Hackenberger W,Trolier-McKinstry S.Phase development and electrical property analysis of pulsed laser deposited Pb(Mg1/3Nb2/3)O3-PbTiO3 (70/30) epitaxial thin films.J.Appl.Phys.,1998,84(9):5147-5154.
[16] Idink H,White W B.Raman-spectroscopic study of order-disorder in lead magnesium niobate.J.Appl.Phys.,1994,76(3):1789-1793.
[17] Qu W,Zhao X,Tan X.Evolution of nanodomains during the electric-field-induced relaxor to normal ferroelectric phase transition in a Sc-doped Pb(Mg113Nb2/3)O3 ceramic.J.Appl.Phys.,2007,102(8):084101-1-8.
[18] Jiang F,Kojima S.Study of three different relaxor ferroelectrics by high resolution micro-Brillouin scattering.Jpn.J.Appl.Phys.,2000,39(9B):5704-5710.
[19] Samara G A.The relaxational properties of compositionally disordered ABO3 perovskites.J.Phys.:Condens.Matter,2003,15(9):R367-R411.
[20] Vakhrushev S B,Naberezhnov A A,Dkhil B,et al.Structure of nanodomains in relaxors.Fundamental Physics of Ferroelectrics,2003,677:74-83.
[21] Es-Souni M,Abed M,Piorra A,et al.Microstructure and properties of Sol-Gel processed Pb1-1-xLax(Zr0.52,Ti0.48)1-x/4O3 thin films.The effects of lanthanum content and bottom electrodes.Thin Solid Films,2001,389(1/2):99-107.
[22] Park C H,Chadi D J.Microscopic study of oxygen-vacancy defects in ferroelectric perovskites.Phys.Rev.B,1998,57(22):R13961-R13964.
[23] Pintilie L,Boerasu I,Gomes M,et al.Metal-ferroelectric-metal structures with Schottky contacts.Ⅱ.Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films.J.Appl.Phys.,2005,98(12):124104-1-8.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%