为了提高碳化物靶溅射薄膜的结晶程度和相应的力学性能,采用等化学计量比的VC靶(n(C)∶n(V)=1∶1)和富V的VC靶(n(C)∶n(V)=0.75∶1)通过磁控溅射方法制备了一系列VC薄膜,利用EDS、XRD、SEM和微力学探针研究了靶成分、溅射气压和基片温度对薄膜化学成分、微结构和力学性能的影响.结果表明,对于等化学计量比的VC靶,在Ar气压为2.4～3.2 Pa的范围内可获得结晶程度和硬度较高的VC薄膜,其最高硬度为28 GPa.而采用富V的VC靶时,在较低的Ar气压(0.6～1.8 Pa)下就可获得结晶程度高的VC薄膜,其硬度达到31.4 GPa.可见,相对于溅射参数的Ar气压和基片温度,靶的成分对于所获薄膜的成分、微结构和力学性能影响更显著,因而适当提高靶中金属组分的含量是获得结晶良好且具高硬度的VC薄膜更为有效的途径.
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