采用物理气相传输法(Physical Vapor Transport,PVT)沿[0001]方向生长了一个直径为2英寸的氮掺杂6H-SiC晶体.采用拉曼面扫描方法对晶体中多型的分布进行了细致表征,研究了SiC晶体生长过程中多型的产生和演化.在6H-SiC晶体中观察到了15R-SiC和4H-SiC两种多型.在拉曼面扫描得到的晶体多型分布图上观察到了两类次多型结构区域,一类是继承其生长界面上对应的次多型结构形成的次多型结构区；另一类是由温度、压力等生长条件波动导致在6H-SiC主多型中出现的15R-SiC多型结构区.第一类次多型结构区中掺入的氮元素较多,载流子浓度较高,并且随着晶体生长不断扩大;第二类次多型结构区对晶体结晶质量的影响较小,且提高生长温度可以抑制15R-SiC多型结构.
参考文献
| [1] | Treu M,Rupp R,Blaschitz P,et al.Commercial SiC device processing:Status and requirements with respect to SiC based power devices.Superlattice Microst.,2006,40(4/5/6):380-387. |
| [2] | Okumura H.Present status and future prospect of widegap semiconductor high-power devices.Japanese Journal of Applied Physics,2006,45(10A):7565-7586. |
| [3] | Shaffer P T B.A review of structure of silicon carbide.Acta Crystall B-Stru.,1969,B25:477-488. |
| [4] | Fujimoto T,Katstno M,OhtaniN,et al.4H Polytype Grain Formation in PVT-grown 6H-SiC Ingots.Silicon Carbide and Related Materials 2001,Pts 1 and 2,Proceedings,2002,389(3):47-50. |
| [5] | Nakashima S,Harima H.Raman investigation of SiC polytypes.Physica Status Solidi a-Applied Research,1997,162(1):39-64. |
| [6] | Ward Y,Young R J,Shatwell R A.A microstructural study of silicon carbide fibres through the use of Raman microscopy.Journal of Materials Science,2001,36(1):55-66. |
| [7] | Wellmann P J,Straubinger T,Kunecke U,et al.Optical mapping ofaluminum doped p-type SiC wafers.Phys Status Solidi A,2005,202(4):598-601. |
| [8] | Mermoux M,Crisci A,Baillet F.Raman imaging characterization of structural and electrical properties in 4H-SiC.Mater.Sci.Forum,2004,457-460:609-612. |
| [9] | Burton J C,Sun L,Pophristic M,et al.Spatial characterization of doped SiC wafers by Raman spectroscopy.J.Appl.Phys.,1998,84(11):6268-6273. |
| [10] | Muller S G,Glass R C,Hobgood H M,et al.The status of SiC bulk growth from an industrial point of view.Journal of Crystal Growth,2000,211(1-4):325-332. |
| [11] | Sakwe S A,Stockmeier M,Hens P,et al.Bulk growth of SiCreview on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution.Physica Status Solidi B-Basic Solid State Physics,2008,245(7):1239-1256. |
| [12] | Li X B,Shi E W,Chen Z Z,et al.Polytype formation in silicon carbide single crystals.Diam.Relat.Mater.,2007,16(3):654-657. |
| [13] | Lin S H,Chen Z M,Liu B,et al.Identification and control of SiC polytypes in PVT method.Journal of Materials Science-Materials in Electronics,2010,21(4):326-330. |
| [14] | Caldwell J D,Glembocki O J,Prokes S M,et al.Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner.J.Appl.Phys.,2007,101(9):093506-1-7. |
| [15] | Sun G S,Liu X F,Wu H L,et al.Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.Chinese Phys.B,2011,20(3):033301. |
| [16] | Lin S H,Chen Z M,Feng X F,et al.Observation of polytype stability in different-impurities-doped 6H-SiC crystals.Diam.Relat.Mater.,2011,20(4):516-519. |
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