利用自主设计、组装的高压脉冲激光沉积(PLD)系统, 研究了温度、靶材、催化剂厚度等生长参数对ZnO和Zn1-xMgxO纳米棒生长的影响, 并对ZnO纳米棒的生长机理和Zn1-xMgxO纳米棒的光致发光性能进行了探讨. 实验发现, 当金膜催化剂厚度为2 nm、温度为925℃时, 在单晶Si衬底上生长了直径均匀的ZnO纳米棒阵列, 且具有明显的(002)择优生长取向. 实验发现温度与催化剂厚度是影响ZnO纳米棒的直径和生长密度的重要因素. 据此提出了ZnO纳米棒阵列的高压PLD生长过程应为气–液–固和气–固相结合的生长机制. 通过在ZnO靶材中掺入氧化镁, 获得了Zn1-xMgxO纳米线和纳米带结构, 但生长无明显的择优取向. 光致发光谱测量表明, 镁掺杂明显增大了ZnO的带隙, 但也在其禁带中引入了缺陷能级, 导致可见发光明显增强.
The influence of the experimental parameters such as temperature, target, and thickness of catalyst layer on the growth of nanorods were systemically studied by a newly designed and home-built high-pressure pulsed laser deposition Zn1-xMgxO (PLD). The growth mechanism and photoluminescence properties of ZnO and Zn1-xMgxO nanorods were also investigated. It was found that c-orientated ZnO nanorod arrays grown on silicon substrate were obtained when the growth temperature was 925℃ and the thickness of gold catalyst layer was 2 nm. It was also proved that growth temperature and catalyst layer thickness were both crucial for the diameter and growth density of ZnO nanorods. A combination of vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism was proposed to describe the growth of ZnO nanorods by high-pressure PLD. Zn1-xMgxO nanorods and nanobelts with random orientation were grown by doping the ZnO target with MgO. The bandgap of ZnO was effectively expanded together with defect-related levels formation in the forbidden gap, which also induced enhancement of visible peak emission.
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