采用聚氨酯海绵为多孔模板,浸渍有机硅树脂后在Ar气氛中原位合成了SiC纳米线.采用TG、XRD、SEM和TEM等分析测试手段对样品进行了表征,研究了保温时间对合成SiC纳米线的影响,并探讨了SiC纳米线的生长机理.研究结果表明:SiC纳米线生长在多孔陶瓷中,纳米线长度达几十微米,单根纳米线的直径不均一.SiC纳米线的生长机理为VS生长模式.随着保温时间的延长,纳米线的数量增加,形貌发生了变化,且多孔陶瓷的比表面积明显增大,体积电阻率降低.
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