以单晶si (100)为基底,采用无机溶胶-凝胶法在其表面制备W-Mo复合离子掺杂VO2薄膜.采用SEM、XRD等手段分析了薄膜的表面形貌和晶体结构.在热驱动下,利用原位FTIR分析了W-Mo复合离子掺杂VO2薄膜半导体-金属相变性能.结果显示:单晶Si (100)表面VO2薄膜具有(011)择优生长取向,W6+、Mo6+取代了V4+在晶格中的位置,实现置换掺杂.热滞回线分析表明,与未掺杂VO2薄膜相比,V1-x-yMoxWyO2薄膜相变温度降低,滞后温宽减小,同时相变陡然性变差,相变温宽增大；在相变温度区间内,温度路径对红外透过率具有调制效果,其调制作用受原始热滞回线的制约.
参考文献
| [1] | Morin F J.Oxides which show a metal-to insulator transition at the neel temperature.Phys.Rev.Lett.,1959,3(1):34-36. |
| [2] | Cavalleri A,T6th C,Siders C W,et al.Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition.Phys.Rev.Lett.,2001,87(23):207401-1-4. |
| [3] | Lysenko S,Vikhnin V,Fernandez F,et al.Photoinduced insulatorto-metal transition in VO2 crystalline films and model of dielectric susceptibility.Phys.Rev.B,2007,75(7):075109-1-13. |
| [4] | Chen Sihai,Ma Hong,Dai Jun,et al.Nanostructured vanadium dioxide thin films with low phase transition temperature.Appl.Phys.Lett.,2007,90(10):101117-1-3. |
| [5] | Manning T D,Parkin I P,Pemble M E,et al.Intelligent windowcoatings:atmospheric pressure chemical vapor deposition of tungstendoped vanadium dioxide.Chem.Mater.,2004,16(4):744-749. |
| [6] | Lysenko S,Rua A J,Vikhnin V,et al.Light-induced ultrafast phase transitions in VO2 thin film.Appl.Surf.Sci.,2006,252(15):5512-5515. |
| [7] | Roach W R.Holographic Storage in VO2.Appl.Phys.Lett.,1971,19(11):453-455. |
| [8] | WEI Xiong-Bang,WU Zhi-Ming,WANG Tao,et al.Growth of vanadium oxide thin films on glass substrate.Journal of Inorganic Materials,2008,23(2):364-368. |
| [9] | Nishikawa Masami,Nakajima Tomohiko,Kumagai Toshiya,et al.Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions.J.Ceram.Soc.Jpn,2011,119(7):577-580. |
| [10] | Raimrez J G,Sharoni A,Dubi Y,et al.First-order reversal curve measurements of the metal-insulator transition in VO2:signatures of persistent metallic domains.Phys.Rev.B,2009,79(23):235110-1-7. |
| [11] | Lopez R,Boatner L A,Haynes T E,et al.Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation.Appl.Phys.Lett.,2001,79(19):3161-3163. |
| [12] | Shi Jianqiu,Zhou Shuxue,You Bo,et al.Preparation and thennochromic property of tungsten-doped vanadium dioxide particles.Solar Energy Materials & Solar Cells,2007,91(19):1856-1862. |
| [13] | Du Jing,Gao Yanfeng,Luo Hongjie,et al.Significant changes in phase-transition hysteresis for Ti-doped VO2 films prepared by polymer-assisted deposition.Solar Energy Materials & Solar Cells,2011,95(2):469-475. |
| [14] | Burkhardt W,Christmann T,Franke S,et al.Tungsten and fluorine co-doping of VO2 films.Thin Solid Films,2002,402(1/2):226-231. |
| [15] | Soltani M,Chaker M,Haddad E,et al.Effects of Ti-W codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition.Appl.Phys.Lett.,2004,85(11):1958-1960. |
| [16] | Yan Jiazhen,Zhang Yue,Huang Wanxia,et al.Effect of Mo-W Co-doping on semiconductor-metal phase transition temperature of vanadium dioxide film.Thin Solid Films,2008,516(23):8554-8558. |
| [17] | Viswanath B,Ko C,Ramanathan S.Thermoelastic switching with controlled actuation in VO2 thin films.Scripta Mater.,2011.64(6):490-493. |
| [18] | Gurvitch M,Luryi S,Polyakov A,et al.Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging.J.Appl.Phys.,2009,106(10):1-1-15. |
| [19] | Brassard D,Fourmaux S,Jean-Jacques M,et al.Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films.Appl.Phys.Lett.,2005,87(5):051910-1-3. |
| [20] | Piccirillo C,Binions R,Parkin I P.Synthesis and characterisation of W-doped VO2 by aerosol assisted chemical vapour deposition.Thin Solid Films,2008,516(8):1992-1997. |
| [21] | Xu Shiqing,Ma Hongping,Dai Shixun,et al.Study on optical and electrical switching properties and phase transition mechanism of Mo6+ doped vanadium dioxide thin films.Journal of Materials Science,2004,39(2):489-493. |
| [22] | Lopez R,Haynes T E,Boatner L A,et al.Size effects in the structural phase transition of VO2 nanoparticles.Phys.Rev.B,65(22):224113-1-5. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%