采用直流溅射法在Y2O3/YSZ/CeO2(YYC)缓冲层的织构NiW基带上,通过基片温度调制YBa2Cu3O7-δ (YBCO)外延薄膜生长.X射线衍射仪(XRD)表征显示,基片温度强烈地影响YBCO薄膜的外延生长:在较低的基片温度下薄膜趋于a轴取向生长,随基片温度升高薄膜逐渐变为纯c轴取向生长.由于a轴晶粒引起的大角度晶界会阻碍超导电流在a-b面内的传输,因此YBCO薄膜的微观结构和超导电性能随温度升高而得到改善,但是随着基片温度继续升高,基带的氧化程度加剧,YBCO与缓冲层间发生界面反应,从而导致薄膜质量衰退.本研究还计算了YBCO薄膜中的位错密度,并研究了位错密度与自场下YBCO薄膜临界电流密度(Jc)之间的关系.结果表明:YBCO薄膜在自场下的临界电流密度对螺旋位错密度比对刃型位错密度更加敏感,这主要是由YBCO薄膜的螺旋生长机制引起的.
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