AZO薄膜用于GaN基LED透明电极的性能研究

无机材料学报, 2013, 28(6): 649-652. doi: 10.3724/SP.J.1077.2013.12482

AZO薄膜用于GaN基LED透明电极的性能研究

陈丹 ^1, , 吕建国 ^2, , 黄靖云 ^3, , 金豫浙 ^4, , 张昊翔 ^5, , 叶志镇 ^6,

1.浙江大学材料科学与工程学系,硅材料国家重点实验室,杭州 310027

2.浙江大学材料科学与工程学系,硅材料国家重点实验室,杭州 310027

3.浙江大学材料科学与工程学系,硅材料国家重点实验室,杭州 310027

4.杭州士兰明芯科技有限公司,杭州,310018

5.杭州士兰明芯科技有限公司,杭州,310018

6.浙江大学材料科学与工程学系,硅材料国家重点实验室,杭州 310027

基金项目: National Natural Science Foundation of China(51172204,51002131) 浙江省科技厅项目(2010R50020) Research Funds of Education Department of Zhejiang Province(2010R50020) 国家自然科学基金(51172204,51002131)

关键词： AZO薄膜 , GaN基LED , 透明电极 , 脉冲激光沉积

Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

Keywords： AZO thin films , GaN-based LEDs , transparent electrodes , pulsed laser deposition

采用脉冲激光沉积法制备了Al掺杂ZnO(AZO)薄膜,研究了不同沉积氧压下薄膜的光电性能.当沉积压强为0.1 Pa时,AZO薄膜光电性能最优.将该薄膜用于GaN基LED透明电极作为电流扩展层,在20 mA正向电流下观察到了520 nm处很强的芯片发光峰,但芯片工作电压较高,约为10V,芯片亮度随正向电流的增大而增强.二次离子质谱测试表明,AZO薄膜与GaN层界面处两种材料导电性能的变化以及钝化层的形成是导致芯片工作电压偏高的原因.

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