实验以高含氢硅油(H-PSO)为原料,在石墨材料表面制备SiC晶须,利用“正交试验法”以结晶率为指标,研究热处理温度(T)、保温时间(t)、保护性气氛流量(f)和基体孔隙率(P)这四个因素对SiC晶须生成的影响.通过扫描电镜、透射电镜、拉曼光谱及X射线衍射等测试手段,分析了SiC晶须形貌及结构特点.实验结果表明,热处理温度是影响SiC晶须生成最重要的因素,其影响程度远远大于其他参数,其次是气流量、孔隙率和保温时间.安全流量范围内,较高的气流量使SiC晶须生成反应充分进行；较小的孔隙率有利于SiC晶核的长大；高的热处理温度及长的保温时间能促进SiC晶须的继续生长.SiC晶须是以SiC晶相为核,以硅的氧化物为壳的核壳结构.
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