采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性,重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响.结果表明,当气体总流量为50 sccm、CF4浓度为26%、刻蚀功率为400W和刻蚀压力为13.3 Pa时,刻蚀速度达到126 nm/min,TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)、刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好.
参考文献
[1] | Ovshinsky S R.Reversible electrical switching phenomena in disordered structures.Phys.Rev.Lett.,1968,21(20):1450-1453. |
[2] | Feng G M,Liu B,Song Z T,et al.Reactive ion etching of Ge2Sb2Te5 in CHF3/O2 plasma for nonvolatile phase-change memory device.Electrochemical and Solid-State Letters,2007,10(5):D47-D50. |
[3] | Washington J S,Joseph E A,Raoux S,et al.Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5.J.Appl.Phys.,2011,109(3):0345021-1-7. |
[4] | Kang S K,Jeon M H,Park J Y,et al.Etch damage of Ge2Sb2Te5 for different halogen gases.Jpn.Appl.Phy.,2011,50(1):0865011-1-4. |
[5] | Feng G M,Liu B,Song Z T,et al.Reactive-ion etching of Ge2Sb2Te5 in CF4/Ar plasma.Microelec.Eng.,2008,85(8):1699-1704. |
[6] | Chen D,Xu D,Wang J,et al.Dry etching of A1N films using the plasma generated by fluoride.Vacuum,2009,83(2):282-285. |
[7] | Engelmark F.A1N and High-K Thin Films for IC and Electroacoutic Applications.Uppsala:Uppsala University,2002:25 28. |
[8] | Saito S,Sugita K,Tonotani J.Effect of CHF3 addition on reactive ion etching of aluminum using inductively coupled plasma.Jpn.Appl.Phys.,2005,44(5A):2971-2975. |
[9] | Plank N O V,Cheung R.Functionalisation of carbon nanotubes for molecular electronics.Microelec.Eng.,2004,73/74:578-582. |
[10] | Li X,Abe T,Esashi M.Deep reactive ion etching of Pyrex glass using SF6 plasma.Sensors Actuator A,2001,87(3):139-145. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%