石墨衬底上低维ZnO纳米材料的生长

无机材料学报, 2014, 29(1): 103-107. doi: 10.3724/SP.J.1077.2013.13273

石墨衬底上低维ZnO纳米材料的生长

张志坤 ^1, , 章俞之 ^2, , 边继明 ^3, , 孙景昌 ^4, , 秦福文 ^5, , 刘维峰 ^6, , 骆英民 ^7,

1.大连理工大学物理与光电工程学院,大连,116024

2.中国科学院特种无机涂层重点实验室,上海,200050

3.大连理工大学物理与光电工程学院,大连116024;中国科学院特种无机涂层重点实验室,上海200050

4.辽宁师范大学物理与电子技术学院,大连,116029

5.大连理工大学物理与光电工程学院,大连,116024

6.大连理工大学物理与光电工程学院,大连,116024

7.大连理工大学物理与光电工程学院,大连,116024

基金项目: Open Fund of Key Laboratory of Special Inorganic Coating of Chinese Academy of Sciences(KLICM-2012-01) Fundamental Research Funds for the Central Universities(DUT13LK02,DUT13LAB12)

关键词： ZnO , 石墨 , 光致发光 , 高功率光电子器件

Growth of Low-dimensional ZnO Materials on Graphite Substrate

Keywords： ZnO , graphite , photoluminescence , high power optoelectrics devices

本研究成功地在石墨衬底上制备了低维ZnO材料,即一维的ZnO纳米棒和二维的ZnO薄膜.采用X射线衍射、场发射扫描电镜、光致发光谱和反射谱等测量技术对石墨衬底上制备的低维ZnO纳米材料的晶体结构、形貌和光学特性进行了表征.结果发现在室温条件下,准一维的ZnO纳米棒和二维的ZnO薄膜都表现出了较好的近带边发射,基本探测不到由杂质和缺陷等引起的深能级发光,并且这种低维ZnO材料/石墨衬底复合结构在300～800 nm光谱范围内具有较低的反射率.本实验结果对于ZnO基光电子器件性能的提高以及在太阳能电池领域的应用具有重要意义.

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