采用固相合成法制备出致密的FeTiNbO6陶瓷,研究了材料的相结构与电学行为.结果显示,样品为四方金红石结构,晶胞参数a=b=0.4652 nm,c=0.3013 nm.相对于纯金红石型TiO2,FeTiNbO6陶瓷晶格畸变增大,诱发体系出现铁电行为.此外,样品呈现弥散相变与频率色散现象,这与金红石结构中等同八面体中心位不等价离子的占据相关.样品的直流电导率主要来源于氧空位的电离与迁移,其转变点靠近相变区域.研究表明FeTiNbO6是一种具有应用潜力的新型无铅弛豫铁电体.
参考文献
[1] | Cross L E.Relaxor ferroelectrics:an overview.Ferroelectrics,1994,151(1):305-320. |
[2] | Bokov A A,Ye Z G.Recent progress in relaxor ferroelectrics with perovskite structure.J.Mater.Sci.,2006,41(1):31-52. |
[3] | Wu N N,Hou Y D,Wang C,et al.Effect of sintering temperature on dielectric relaxation and Raman scattering of 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3system.J.Appl.Phys.,2009,105(8):084107-1-6. |
[4] | Alguer6 M,Alemany C,Jiménez B,et al.Piezoelectric PMN-PT ceramics from mechanochemically activated precursors.J.Euro.Ceram.Soc.,2004,24(6):937-940. |
[5] | Zhao L Y,Hou Y D,Chang L M,et al.Microstructure and electrical properties of 0.5PZN-0.5PZT relaxor ferroelectrics close to the morphotropic phase boundary.J.Mater.Res.,2009,24(6):2029-2034. |
[6] | Lee C,Ghosez P,Gonze X.Lattice dynamics and dielectric properties of incipient ferroelectric TiO2 rutile.Phys.Rev.B,1994,50(18):13379-13387. |
[7] | Chen A,Zhi Y.Impurity-induced ferroelectric relaxor behavior in quantum paraelectric SrTiO3 and ferroelectric BaTiO3.Phys.Rev.B,2002,61(2):957-961. |
[8] | Lin Y H,Ying M H,Li M,et al.Room-temperature ferromagnetic and ferroelectric behavior in polycrystalline ZnO-based thin films.Appl.Phys.Lett.,2007,90(22):222110-1-3. |
[9] | Mani R,Achary S N,Chakraborty K R,et al.FeTiTaO6:a lead-free relaxor ferroelectric based on the rutile structure.Adv.Mater.,2008,20(7):1348-1352. |
[10] | Shi Y,Hou Y D,Wang C,et al.Microstructure and relaxor behavior of dense fine-grain Fetitao6 ceramics.J.Am.Ceram.Soc.,2010,93(9):2491-2494. |
[11] | Shi Y,Hou Y D,Ge H Y,et al.Comparative studies of ferroelectric behavior in rutile type FeTiTaO6 and A1TiTaO6.Mater.Res.Bull.,2012,47(2):184-187. |
[12] | Uchino K,Nomura S.Critical exponents of dielectric constants in diffused-phase-transition crystals.Ferroelectr Lett.Sect.,1982,44(1):56-61. |
[13] | Catalan G,Scott J F.Physics and applications of bismuth ferrite.Adv.Mater.,2009,21(24):2463-2485. |
[14] | Bridges C A,Allix M,Suchomel M R,et al.A pure bismuth a site polar perovskite synthesized at ambient pressure.Angew.Chem.Int.Ed.,2007,46(46):8785-8789. |
[15] | Zhao L Y,Hou Y D,Wang C,et al.The enhancement of relaxation of 0.5PZN-0.5PZT annealed in different atmospheres.Mater Res.Bull.,2009,44(8):1652-1655. |
[16] | Deng G C,Li G R,Ding A L,et al.Evidence for oxygen vacancy inducing spontaneous normal-relaxor transition in complex perovskite ferroelectrics.Appl.Phys.Lett.,2005,87(19):192905-1-3. |
[17] | Jiang B,Zuo J M,Jiang N,et al.Charge density and chemical bonding in rutile,TiO2.Acta.Cryst.A,2003.59(Pt 4):341-350. |
[18] | Montanari B,Harrison N M.Pressure-induced instabilities in bulk TiO2 rutile.J.Phys:Condensed.Matter.,2004,16(3):273-292. |
[19] | Fehr K T,Hochleitner R,Schmidbauer E.Electrical properties of rutile-type FeTiMO6 (M =Ta,Nb).J.Electroceram.,2012,29(4):240-249. |
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