采用高压脉冲激光沉积法(HP-PLD)研究了压强、金催化层厚度对钠掺杂氧化锌纳米线(ZnO∶Na)生长的影响,并制备了ZnO∶A1薄膜/ZnO∶Na纳米线阵列同质pn结器件.实验发现,当金膜厚度为4.2 nm,生长压强为3.33×104 Pa,生长温度为875℃时,可在单晶Si衬底上生长c轴取向性良好的ZnO纳米线阵列.X射线衍射和X射线光电子能谱综合分析证实了Na元素成功掺入ZnO纳米线晶格中.在低温(15 K)光致发光谱中,观测到了一系列由Na掺杂ZnO产生引起的受主光谱指纹特征,如中性受主束缚激子峰(3.356 eV,A0X)、导带电子到受主峰(3.312 eV,(e,A0))和施主受主对发光峰(3.233 eV,DAP)等.通过在ZnO∶Al薄膜上生长ZnO∶Na纳米线阵列形成同质结,测得I-V曲线具有明显的整流特性,证实了ZnO∶Na纳米线具有良好的p型导电性能.
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