采用磁控溅射方法,在H2/Ar混合气氛下制备了GZO薄膜和在Ar气氛下制备了GZO/Cu/GZO多层结构薄膜,分别研究了H2流量和Cu层厚度对薄膜透明导电性能的影响.在此基础上,在H2/Ar混合气氛下制备了GZO/Cu/GZO多层结构薄膜,对Cu层厚度对其性能的影响进行了研究.结果表明,沉积气氛中引入H2能有效降低GZO薄膜的电阻率而提高其透光率,在H2流量为20 sccm时GZO薄膜具有最佳性能.随着Cu厚度的增加,GZO/Cu/GZO多层结构薄膜的电阻率和平均透过率显著下降.在H2/Ar混合气氛下制备的氢化GZO/Cu/GZO多层结构薄膜的电阻率普遍低于Ar气氛下制备的GZO/Cu/GZO多层结构薄膜,但其透光率却随Cu层厚度的增加而显著降低.另外,薄膜的禁带宽度随H2流量的增加而增加,随Cu层厚度的增加而减小.
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