原子层沉积生长技术(ALD)是以表面自限制化学反应为机制的薄膜沉积技术,可以一层一层地生长薄膜.该技术具有生长温度低、沉积厚度精确可控、保形性好和均匀性高等优点,逐渐成为制备薄膜材料最具发展潜力的薄膜生长技术.作为ALD技术中一个关键的指标——生长速率,不仅对沉积所得薄膜的晶体质量、致密度起重要作用,更重要的是影响集成电路的生产效率.本文综述了近年来ALD生长机制和生长速率方面的研究结果,以及ALD技术生长速率的影响因素,并分析探讨了提高和改善ALD生长速率的方法以及研究趋势.
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